Radio frequency modules and modules for moving
AssigneeHitachi, Ltd.
InventorsKatsuhiko Higuchi, Shinichiro Takatani
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Abstract
It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effect transistor in which channel layers for traveling of carriers are formed by a heterostructure of two or more different kinds of materials, and height of a potential barrier of an interface between the different kinds of materials is less than 0.22 eV.
Claims14
A radio frequency module comprising:
- monolithic microwave integrated circuits on a single substrate which include at least an oscillator, an amplifier, and a receiver, at least one of said oscillator, said amplifier, and said receiver including a field effect transistor having a channel region with a junction of two or more different kinds of materials.
A radio frequency module comprising:
- a monolithic microwave integrated circuit portion having an amplifier including at least a field effect transistor, said field effect transistor having a channel region with a junction of two or more different kinds of materials, and height of a potential barrier of a junction interface between the different kinds of materials in said channel region being less than 0.22 eV.
A radio frequency module comprising:
- a monolithic microwave integrated circuit portion including at least a field effect transistor, said field effect transistor comprising a first semiconductor layer containing an impurity;
- and a second semiconductor layer having a smaller band gap than that of the first semiconductor layer, said first semiconductor layer and said second semiconductor layer being joined together to form a heterostructure, said second semiconductor layer containing substantially no impurity, at least said second semiconductor layer forming a channel region, and height of a potential barrier of a junction interface between different kinds of materials in said channel region being less than 0.22 eV.
A module for moving target detection comprising:
- monolithic microwave integrated circuits on a single substrate which include at least an oscillator, an amplifier, and a receiver, at least one of said oscillator, said amplifier, and said receiver including a field effect transistor having a channel region with a junction of two or more different kinds of materials.
Dependencies are inferred from the claim text.