Two-terminal semiconductor overcurrent limiter
AssigneeShindengen Electric Manufacturing Co., Ltd.
InventorsKunihito Ohshima, Masaya Shirota, Toshikazu Tezuka
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Abstract
A semiconductor overcurrent limiter having input and output terminals includes a depletion type vertical MOSFET, a depletion type lateral MOSFET, and a zener diode. A back gate of the lateral MOSFET is formed in common with a drain electrode of the vertical MOSFET to provide the input terminal, and a gate of the vertical MOSFET is connected to an anode of the zener diode to provide the output terminal. Further, a source electrode of the vertical MOSFET is connected to source and gate electrodes of the lateral MOSFET and a cathode electrode of the zener diode.
Claims7
A semiconductor overcurrent limiter having first and second terminals comprising:
- a semiconductor substrate having first and second surfaces;
- a vertical MOSFET, provided in said semiconductor substrate, having first source and gate electrodes, disposed on said first surface, and a first drain electrode disposed on said second surface to provide said first terminal;
- a lateral MOSFET, provided in said semiconductor substrate and connected in series with said vertical MOSFET, having second source, drain and gate electrodes, disposed on said first surface, and a back gate electrode provided on said second surface in common with said first drain electrode;
- and
- a zener diode, provided in said first surface, having an anode electrode, connected to said first gate electrode and formed in common with said second drain electrode to provide said second terminal, and a cathode electrode connected to both said second source electrode and said second gate electrode.
Dependencies are inferred from the claim text.