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US 2002/0000554 A1Published application
Electric device, matrix device, electro-optical display device and semiconductor memory having thin-film transistors
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuhiko Takemura
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Abstract
A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS and PMOS thin-film transistors is constructed to drive the dynamic circuit.
Claims19
A method of manufacturing a semiconductor device comprising at least two p-channel thin film transistors,
- said method comprising the steps of:
- forming a semiconductor island over a substrate;
- forming a gate electrode adjacent to the semiconductor island with a gate insulating film therebetween;
- forming a source region, a drain region and a channel region formed between the source and drain regions,
- wherein the two p-channel thin film transistors are connected in series.
2 more elements
A method of manufacturing a display device,
- said display device comprising:
- a pixel portion and a driving circuit portion;
- at least two p-channel thin film transistors being formed in the pixel portion;
- said method comprising the steps of:
- forming a semiconductor island over a substrate;
- forming a gate electrode adjacent to the semiconductor island with a gate insulating film therebetween;
- forming a source region, a drain region and a channel region formed between the source and drain regions,
- wherein the two p-channel thin film transistors are connected in series.
5 more elements
A method of manufacturing a semiconductor device,
- said semiconductor device comprising:
- at least a first p-channel thin film transistor and a second p-channel thin film transistor;
- a transmission gate including a CMOS circuit, said CMOS circuit including at least an n-channel thin film transistor and a third p-channel thin film transistor;
- said method comprising the steps of:
- forming a semiconductor island over a substrate;
- forming a gate electrode adjacent to the semiconductor island with a gate insulating film therebetween;
- forming a source region, a drain region and a channel region formed between the source and drain regions,
- wherein the first and second p-channel thin film transistors are connected in series.
5 more elements
Dependencies are inferred from the claim text.