Back to results
US 2002/0000552 A1Published application
Semiconductor device and method of producing the same
AssigneeSanyo Electric Co., Ltd.
InventorsYoshihiro Morimoto, Kiyoshi Yoneda
Life of this patent
Estimating the term…
Abstract
An a-Si film (12) formed on an insulating substrate (10) is irradiated with a laser so that the a-Si film (12) is fused and recrystallized to form a p-Si film (13). Projections (100) generated on the p-Si film (13) at this stage are eliminated by irradiation of ion beams at the incident angle of 60° to 90° using an ion milling method to planarize the surface of the p-Si film (13), thereby creating sufficient insulation between the p-Si film (13) and gate electrodes (15).
Claims7
A method of producing a semiconductor device, comprising the steps of:
- forming a non-crystal semiconductor film on a substrate;
- heating said non-crystal semiconductor film:
- and
- eliminating projections generated by said heating on said non-crystal semiconductor film using a physical elimination method.
1 more element
A semiconductor device comprising:
- a substrate;
- and
- a non-crystal semiconductor film formed on said substrate,
- wherein said non-crystal semiconductor film has a planar surface formed by eliminating, using ion beam irradiation, projections generated on said non-crystal semiconductor film due to heating of said non-crystal semiconductor film.
1 more element
Dependencies are inferred from the claim text.