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AssigneeSimage Oy
InventorsKONSTANTINOS EVANGELOS SPARTIOTIS, MILTIADIS EVANGELOS SARAKINOS, TOM GUNNAR SCHULMAN
Estimating the term…
In a semiconductor imaging device, the distance between the edge of a substrate and an edge-most charge collection contact is made as small as possible, preferably less than 500 μm and/or less than ⅓ of the substrate thickness. Additionally or alternatively, a passivation layer is placed between the edge-most portion of the contact and the substrate surface and/or a field shaping conductor adjacent to the surface. A field shaping region may also be arranged outside the edge of the substrate and may encircle each detector device, or it may encircle an arrangement of several devices. In such an arrangement, the spacing between adjacent detectors should be less than 500 μm. A shield may also be used to shield the edge of each detector, or the edge region of the arrangement of several detectors, from incident radiation. Such arrangements can reduce the effect of edge image deterioration caused by strong field non-uniformities at the detector edges.
A semiconductor imaging device comprising a substrate of semiconductive material and a charge collection contact formed thereon, wherein the charge collection contact is spaced from an edge of the substrate by a distance between 0 and about 500 μm.
A semiconductor imaging device comprising a substrate of semiconductive material and a charge collection contact formed thereon, wherein the charge collection contact is spaced from an edge of the substrate by a distance between 0 and a value which is not significantly greater than about ⅓ of a thickness of the substrate.
A semiconductor imaging device comprising a substrate of semiconductive material and a charge collection contact formed thereon, wherein at least one of an edge-most portion of the charge collection contact and a portion of a field shaping conductor is spaced from a surface of the substrate by a passivation material.
A semiconductor imaging device comprising a substrate of semiconductive material, a charge collection contact formed thereon, and an outer non-sensitive field shaping region arranged outside and adjacent to an edge of the substrate.
A semiconductor imaging device comprising a semiconductor substrate having a radiation sensitive surface and a means for defining a window region on said surface, said window region being smaller than a surface area of the substrate and configured to receive incident radiation.
An assembly comprising a plurality of semiconductor imaging devices arranged side-by-side to define an extended surface, and a shield configured to prevent a region of the extended surface from receiving incident radiation, said shield defining an imaging surface smaller than the extended surface.
An assembly comprising a plurality of semiconductor imaging devices arranged adjacent to each other to define an extended imaging surface, wherein each device comprises a semiconductor substrate responsive to incident radiation, said assembly further comprising an outer field shaping region positioned outside, but closely adjacent to, an outer edge of the extended imaging surface.
An assembly comprising first and second semiconductor imaging devices, wherein each device comprises a semiconductor substrate on which is mounted a charge collection electrode for the device, said first and second devices being positioned side-by-side with an edge-to-edge spacing of not significantly more than about 500 μm.
A method of producing a semiconductor imaging device, said method comprising the steps of preparing a semiconductor substrate of a predetermined size for the imaging device, and forming a charge collecting contact on the substrate at a distance from an edge of the substrate using a lithographic process.
A method for producing a semiconductor imaging device, said method comprising the steps of forming a charge collecting contact on an oversized semiconductor substrate, and removing material from the substrate adjacent to an edge to achieve an edge-to-contact distance between 0 and about 500 μm.
A method for producing a semiconductor imaging device, said method comprising the steps of forming a charge collecting contact on an oversized semiconductor substrate, and removing material from the substrate adjacent to an edge to achieve an edge-to-contact distance between 0 and a value which is not significantly greater than about ⅓ of the substrate thickness.
Dependencies are inferred from the claim text.