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US 2002/0000546 A1Published application
Light emitting semiconductor devices
AssigneeRicoh Company, Ltd.
InventorSHUNICHI SATO
Life of this patent
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Abstract
A light emitting semiconductor device, which includes a Ga0 9 In0 1 As0 97 active layer disposed between lower n-Ga0 5 In0 5P and upper p-Ga0 5 In0 5 P cladding layers, being provided with lower and upper GaAs spacing layers each intermediate the active layer and the cladding layer. The active layer is approximately lattice-matched to a GaAs substrate and has a thickness of about 0.1 μm with a photoluminescence peak wavelength of approximately 1.3 μm, and the GaAs spacing layers each have a thickness of about 2 nm.
Claims28
A light emitting semiconductor device, comprising:
- a lower cladding layer of Alz Ga1-z As (0<z≦1) or Gat In1-t Pu As1-u (0<t<1 and 0<u≦1) alloy semiconductor layers, having a first conductivity type;
- a lower spacing layer, comprising at least one GaAs monolayer;
- a Gax In1-x Ny As1-y (0≦x≦1 and 0<y<1) active layer, having a thickness less than the critical thickness so as not to give rise to misfit dislocations;
- an upper spacing layer, comprising at least one GaAs monolayer;
- and
- an Alz Ga1-z As (0<z≦1) or Gat In1-t Pu As1-u (0<t<1 and 0<u≦1) upper cladding layer, having a second conductivity type,
- each grown on a semiconductor substrate in the order above recited.
4 more elements
A light emitting semiconductor device, comprising:
- a lower cladding layer of Alz Ga1-z As (0<z≦1) or Gat In1-t Pu As1-u (0<t<1 and 0<u≦1) alloy semiconductor layers, having a first conductivity type;
- a lower light guide layer of Alz Ga1-z As (0<z≦1) or Gat In1-t Pu As1-u (0<t<1 and 0<u≦1) alloy semiconductor layers, having a band gap energy wider than that of said active layer and narrower than that of said lower cladding layer;
- a lower spacing layer, comprising at least one molecular layer of GaAs;
- a Gax In1-x Ny As1-y (0≦x≦1 and 0<y<1) active layer, having a thickness less than the critical thickness so as not to give rise to misfit dislocations;
- an upper spacing layer, comprising at least one GaAs monolayer;
- and
- an upper light guide layer of Alz Ga1-z As (0<z≦ or Gat In1-t Pu As1-u (0<t<1 and 0<u<1) alloy semiconductor layers, having a band gap energy wider than that of said active layer and narrower than that of said lower cladding layer;
- an upper cladding layer of lz Ga1-z As (0<z<1) or Gat In1-t Pu As1-u (0<t<1 and 0<u≦1) alloy semiconductor layers, having a second conductivity type,
- each grown on a semiconductor substrate in the order above recited.
6 more elements
A light emitting semiconductor device, comprising:
- a lower cladding layer comprising n-Al0 5 Ga0 5 P with a layer thickness of approximately 1.5 μm;
- a lower spacing layer comprising GaAs with a thickness of approximately 2 nm;
- a Ga0 9 In0 1 N0 03 As0 97 active layer being approximately lattice-matched to said semiconductor substrate, having a thickness of about 0.1 μm and a photoluminescence peak wavelength of approximately 1.3 μm;
- an upper spacing layer comprising GaAs with a thickness of approximately 2 nm;
- and
- an upper cladding layer comprising p-Ga0 5 In0 5 P with a layer thickness of approximately 1.5 μm.
3 more elements
A light emitting semiconductor device, comprising:
- a lower cladding layer comprising n-Ga0 5 In0 5 As with a thickness of approximately 1.5 μm;
- a lower light guide layer comprising Al0 2 Ga0 8 As with a thickness of approximately 120 nm;
- a lower spacing layer comprising GaAs with a thickness of approximately 2 nm;
- an active layer comprising a Ga0 94 In0 06 N0 04 As0 96 quantum well which is tensile strained, having a thickness of about 10 nm and a photoluminescence peak wavelength of approximately 1.3μm;
- an upper spacing layer comprising GaAs with a thickness of approximately 2 nm;
- an upper light guide layer comprising Al0 2 Ga0 8 As with a thickness of approximately 120 nm;
- and
- an upper cladding layer comprising p-Ga0 5 In0 5 As with a layer thickness of approximately 1.5 μm.
5 more elements
A light emitting semiconductor device, comprising:
- a lower cladding layer comprising n-Ga0 5 In0 5 As with a thickness of approximately 1.5 μm;
- a lower light guide layer comprising Al0 2 Ga0 8 As with a thickness of approximately 120 nm;
- a lower spacing layer comprising GaAs with a thickness of approximately 2 nm;
- an active layer comprising a Ga0 94 In0 06 N0 04 As0 96 quantum well which is tensile strained, having a thickness of about 10 nm and a photoluminescence peak wavelength of approximately 1.3 μm;
- an upper spacing layer comprising GaAs with a thickness of approximately 2 nm;
- an upper light guide layer comprising Al0 2 Ga0 8 As with a thickness of approximately 120 nm;
- and
- an upper cladding layer comprising p-Ga0 5 In0 5 As with a layer thickness of approximately 1.5 μm.
5 more elements
Dependencies are inferred from the claim text.