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US 2002/0000523 A1Published application
Ion implantation with improved ion source life expectancy
AssigneesAdvanced Micro Devices, Inc., Varian Associates, Inc.
InventorsCHE-HOO NG, EMI ISHIDA, JAIME M. REYES, JINNING LIU, SANDEEP MEHTA
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Abstract
A method of increasing ion source lifetime in an ion implantation system uses the introduction of an inert gas, such as argon or xenon, into the halide-containing source gas. Inert gas constituents have a cleansing effect in the plasma ambient by enhancing sputtering.
Claims20
For an ion implantation system, an ion source comprising:
- an electron source capable of creating charged ions in gases proximate thereto;
- a gas source providing proximate to said electron source a mixture of a source gas containing an ion implantation dopant and an inert gas;
- and
- an ion extraction system for controlling charged ions from said charged plasma.
1 more element
For an ion implantation system, an ion source comprising:
- a source of electrical power filament capable of creating a charged plasma in gases proximate thereto;
- a gas source capable of providing a mixture of a source gas containing an ion implantation dopant gas and an inert gas;
- and
- an ion extraction system for controlling charged ions from said charged plasma.
1 more element
Dependencies are inferred from the claim text.