US 2001/0055892 A1Published application

Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film

AssigneeJsr Corporation

InventorsMichinori Nishikawa, Kouichi Hasegawa, Eiji Hayashi, Kinji Yamada

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Abstract

A composition for film formation which, when used in the production of semiconductor devices and the like, can give interlayer insulating films which differ little in dielectric constant even when obtained through curing under different conditions and have excellent adhesion to substrates, a process for producing the composition, and a silica-based film obtained from the composition. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing (A-1) at least one compound selected from the group consisting of compounds represented by the following formula (1), compounds represented by the following formula (2), and compounds represented by the following formula (3), and (A-2) at least one compound represented by the following formula (4), in the presence of a catalyst and water; and (B) an organic solvent.

Claims8

Dependent claims

A composition for film formation which comprises:

(A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing
(A-1) at least one compound selected from the group consisting of compounds represented by the following formula (1)
RaSi(OR1)4−a (1)
wherein R represents a hydrogen atom, a fluorine atom, or a monovalent organic group;
R1 represents a monovalent organic group;
and a is an integer of 1 or 2, compounds represented by the following formula (2)
Si(OR2)4 (2)
wherein R2 represents a monovalent organic group) , and compounds represented by the following formula (3)
R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c (3)
wherein R3 to R6 may be the same or different and each represents a monovalent organic group;
b and c may be the same or different and each is an integer of 0 to 2;
R7 represents an oxygen atom, a phenylene group, or a group represented by —(CH2)n—, wherein n is an integer of 1 to 6;
and d is 0 or 1, and
(A-2) at least one compound represented by the following formula (4)
R83SiOR9 (4)
wherein R8 and R9 each independently represents a monovalent organic group
in the presence of a catalyst and water;
and
(B) an organic solvent.

16 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/860,914Filed 21 May 2001
Priority: JP 2000-15036322 May 2000
Published: 27 Dec 2001
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10P 14/6922
Containing silicon: the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H10P 14/6342
Deposition processes: liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
H10P 14/665
Characterised by the type of materials: porous materials
H10P 14/6686
The compound comprising silicon and oxygen: the compound being a molecule comprising at least one silicon-oxygen bond and the compound having…