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AssigneeMicron Technology, Inc.
InventorRavi Iyer
Estimating the term…
A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3 comprises placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber. A “clean” silicate glass base layer substantially free of carbon particle impurities on an upper surface is formed in one of two ways. The first employs plasma-enhanced chemical vapor deposition using TEOS and diatomic oxygen gases as precursors to first deposit a “dirty” silicate glass base layer having carbon particle impurities imbedded on an upper surface thereof being transformed to a clean base layer by subjecting it to a plasma treatment, using a mixture of a diamagnetic oxygen-containing oxidant, such as ozone or hydrogen peroxide, and diatomic oxygen gas into the chamber and striking an RF plasma. The second way employs flowing hydrogen peroxide vapor and at least one gaseous compound selected from the group consisting of silane and disilane into the deposition chamber for the formation of the clean base layer and depositing a subsequent glass layer over the PECVD-deposited glass layer using chemical vapor deposition and TEOS and ozone as precursor compounds.
A method of depositing silicate glass on a substrate comprising:
A method of depositing silicate glass on a wafer substrate comprising:
Dependencies are inferred from the claim text.