US 2001/0055873 A1 · SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

Abstract

A semiconductor device superior in reliability and suitable for microminiaturization is provided. An organic SOG film is formed on a silicon oxide film. Boron ions are implanted into the organic SOG film. By introducing boron ions into the organic SOG film, the organic components in the film are decomposed. Also, the moisture and hydroxyl group included in the film are reduced. After a metal interconnection is embedded in a modified SOG film by the Damascene method, a modified SOG film is formed thereon. Then, contact holes are formed. After a contact hole interconnection is embedded in the contact holes, a modified SOG film and an upper metal interconnection are formed by the Damascene method.

Claims20

Dependent claims

A fabrication method of a semiconductor device comprising the steps of:

forming a first insulation layer on a substrate,
introducing impurities into said first insulation layer, and
embedding and forming a first conductive layer in said first insulation layer.

Dependencies are inferred from the claim text.

Facts

Application

09/320,271Filed 27 May 1999

Priority

JP 10-14945629 May 1998

Published

27 Dec 2001

Term ends

Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10P 14/6922
Containing silicon: the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H10P 14/6336
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition: in the presence of a plasma [PECVD]
H10P 14/6539
By exposure to radiation, e.g. visible light: by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
H10P 14/662
Characterised by the type of materials: laminate layers, e.g. stacks of alternating high-k metal oxides

Semiconductor device and fabrication method thereof

Life of this patent

Semiconductor device and fabrication method thereof

Life of this patent

Abstract

Claims20