Method of producing p-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same
AssigneeSony Corporation
InventorsMotonobu Takeya, Satoshi Taniguchi
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Abstract
A nitride based III-V compound semiconductor doped with a p-type impurity is formed on a substrate made from sapphire. The substrate is then placed between a pair of RF electrodes, and a radio frequency field is applied between the RF electrodes. With this operation, electrons present in the compound semiconductor attack the bonding between the p-type impurity and hydrogen, to cut the bonding. The hydrogen atoms thus dissociated are released from the compound semiconductor, to thereby activate the p-type impurity. In this case, it is not required to heat the compound semiconductor by a heater or the like.
Claims6
A method of producing a p-type nitride based III-V compound semiconductor, comprising the steps of:
- preparing a nitride based III-V compound semiconductor containing at least one kind selected from group IIIB elements, at least nitrogen selected from group VB elements, and a p-type impurity;
- and
- applying a radio frequency field to said nitride based III-V compound semiconductor.
A method of fabricating a semiconductor device, comprising the step of:
- producing a p-type nitride based III-V compound semiconductor by preparing a nitride based III-V compound semiconductor containing at least one kind selected from group IIIB elements, at least nitrogen selected from group VB elements, and a p-type impurity and applying a radio frequency field to said nitride based III-V compound semiconductor thus prepared.
Dependencies are inferred from the claim text.