Method for producing low carbon/oxygen conductive layers
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
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Abstract
The present invention provides a method for forming a substantially carbon- and oxygen-free conductive layer, wherein the layer can contain a metal and/or a metalloid material. According to the present invention, a substantially carbon- and oxygen-free conductive layer is formed in an oxidizing atmosphere in the presence of an organometallic catalyst using, for example, a chemical vapor deposition process. Such layers are particularly advantageous for use in memory devices, such as dynamic random access memory (DRAM) devices.
Claims45
A method for use in fabrication of integrated circuits comprising the steps of:
- forming a substrate assembly having a surface;
- and
- forming a substantially carbon- and oxygen-free layer from a precursor comprising a conductive material in an oxidizing atmosphere and in the presence of an organometallic catalyst, wherein a metal portion of the organometallic catalyst is different than the conductive material of the precursor.
A method for use in formation of a capacitor on a substrate comprising the steps of:
- forming a surface of a substrate assembly;
- forming a first electrode on at least a portion of the surface of the substrate assembly, the first electrode comprising a substantially carbon- and oxygen-free layer deposited in an oxidizing atmosphere in the presence of an organometallic catalyst, wherein the substantially carbon- and oxygen-free layer is formed from a conductive metal-containing precursor, wherein the conductive metal of the precursor is different than the metal portion of the organometallic catalyst;
- forming a dielectric material over at least a portion of the first electrode;
- and
- forming a second electrode on at least a portion of the dielectric material.
A semiconductor structure comprising:
- a substrate assembly including a surface;
- a substantially carbon- and oxygen-free conductive layer comprising a major portion of a conductive material and a minor portion of a metal selected from the group consisting essentially of platinum, paladium, rhodium, and iridium, wherein the major portion of the conductive material is not the same as the minor portion of the metal.
A semiconductor structure comprising:
- a substrate assembly including a surface;
- a substantially carbon-free conductive layer comprising a major portion of a conductive metal oxide and a minor platinum portion.
A memory cell structure comprising:
- a substrate assembly including at least one active device;
- and
- a capacitor formed relative to the at least one active device, the capacitor comprising at least one electrode including a substantially carbon- and oxygen-free conductive layer, wherein the substantially carbon- and oxygen-free conductive layer comprises a major portion of a conductive material selected from the group consisting essentially of titanium, tantalum, ruthenium, osmium, iron, rhodium, cobalt, nickel, iridium, cerium, tungsten, aluminum, copper, and mixtures thereof;
- and further wherein the substantially carbon- and oxygen-free conductive layer includes a minor portion of a metal selected from the group consisting essentially of platinum and paladium.
A method for forming a substantially carbon- and oxygen-free conductive layer comprising the steps of:
- forming a substrate including a heated surface;
- forming a reactor chamber having an oxidizing atmosphere within the chamber;
- supplying a precursor to the reactor;
- and
- supplying an organometallic catalyst to the reactor,
- wherein the substantially carbon- and oxygen-free conductive layer forms on the heated surface.
A method of optimizing components in a conductive layer comprising the steps of:
- forming a conductive layer comprising the steps of:
- forming a reactor chamber having a known concentration of oxygen in an oxidizing atmosphere;
- forming a substrate having a heated surface;
- supplying a fixed amount of a precursor to a reactor;
- and
- supplying a fixed amount of an organometallic catalyst to the reactor, wherein the conductive layer forms on the surface of the substrate;
- analyzing the conductive layer for component amounts;
- and
- repeating the steps of forming and analyzing a conductive layer, wherein one of the fixed amount of the organometallic catalyst or the concentration of oxygen in the oxidizing atmosphere is varied until carbon is detected in the conductive layer.
Dependencies are inferred from the claim text.