Process for producing semiconductor member, and process for producing solar cell

A process for producing a semiconductor member, comprising:

• a first step of forming a porous layer by making porous a first member prepared or an epitaxial layer formed at the surface of the first member, leaving some region or regions thereof not made porous;
• a second step of bonding a semiconductor layer formed on the porous layer and on the first member or epitaxial layer that is left not made porous, to a second member to form a bonded structure;
• and
• a third step of separating the bonded structure in the part of the porous layer, at the interface between the porous layer and the first member or at the interface between the porous layer and the semiconductor layer to transfer the semiconductor layer to the second member side,
• wherein the first member or epitaxial layer is made porous leaving some region or regions thereof not made porous so that the porous layer does not cause any separation in the part of the porous layer, at the interface between the porous layer and the first member or at the interface between the porous layer and the semiconductor layer in the first and second steps.