Nonvolatile semiconductor storage apparatus and production method of the same

A nonvolatile semiconductor storage apparatus having a floating gate and a control gate on a semiconductor substrate of a first conductive type,

• wherein a first well of a second conductive type opposite to said first conductive type of said semiconductor substrate is formed on said semiconductor substrate, and in said first well is formed a second well of said first conductive type, in which second well is formed a semiconductor layer of said second conductive type, said semiconductor layer being electrically connected to said control gate.

A method for producing a nonvolatile semiconductor storage apparatus having a floating gate and a control gate on a semiconductor substrate, said method comprising steps of:

• forming on said semiconductor substrate of a first conductive type, a semiconductor layer of a second conductive type opposite to the first conductive type
• electrically connecting said semiconductor layer to said control gate, and
• electrically insulating said semiconductor layer from said control gate during a wiring layer etching.

A method for producing a nonvolatile semiconductor storage apparatus having a floating gate and a control gate on a semiconductor substrate of, said method comprising steps of:

• forming on said semiconductor substrate of a first conductive type, a semiconductor layer of a second conductive type opposite to the first conductive type
• electrically connecting said semiconductor layer to said control gate, and
• electrically insulating said semiconductor layer from said control gate after a wiring layer etching.

A method for producing a nonvolatile semiconductor storage apparatus having a floating gate and a control gate on a semiconductor substrate of, said method comprising steps of:

• forming on said semiconductor substrate of a first conductive type, a semiconductor layer of a second conductive type opposite to the first conductive type
• electrically connecting said semiconductor layer to said control gate using a wiring, and
• cutting off said wiring connecting said semiconductor layer to said control gate during a wiring layer etching.

A method for producing a nonvolatile semiconductor storage apparatus having a floating gate and a control gate on a semiconductor substrate of, said method comprising steps of:

• forming on said semiconductor substrate of a first conductive type, a semiconductor layer of a second conductive type opposite to the first conductive type
• electrically connecting said semiconductor layer to said control gate using a wiring, and
• cutting off said wiring connecting said semiconductor layer to said control gate after a wiring layer etching.