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US 2001/0055843 A1Published application
Method for fabricating semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsJeong Ho Kim, Yu Chang Kim
Life of this patent
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Abstract
The present invention discloses a method for fabricating a semiconductor device. In particular, methods of the present invention produces a contact plug which is larger than the presumed contact region. As a result, the acceptable process error margin for misalignment is increased, and the property and the yield of semiconductor devices are improved.
Claims19
A method for fabricating a semiconductor device, comprising the steps of:
- producing a semiconductor substrate comprising a MOSFET and a device isolation film;
- forming a conductive material layer on said semiconductor substrate;
- forming a metallic film on said conductive layer, wherein said metallic film is a metal oxide or a metal nitride film;
- forming a photoresist film mask on said metallic film for protecting a presumed region of a bit line contact plug and a storage electrode contact plug;
- producing an intermediate mask comprising said metallic film using said photoresist film mask;
- producing a contact plug mask by coating a polymer comprising a metal on side walls of said intermediate mask;
- producing a bit line contact plug and a storage electrode contact plug from said conductive material layer using said contact plug mask;
- and
- removing said contact plug mask.
6 more elements
A method for fabricating a semiconductor device, comprising the steps of:
- forming a semiconductor substrate comprising a MOSFET and a device isolation film;
- forming a conductive material layer on said semiconductor substrate;
- forming an Al2O3 film on said conductive material layer;
- forming a photoresist film mask on said conductive material layer for protecting a presumed region of a bit line contact plug and a storage electrode contact plug;
- producing an intermediate mask by etching said Al2O3 film using said photoresist film mask;
- producing a contact plug mask by coating a polymer comprising Al on the side walls of said intermediate mask;
- producing a bit line contact plug and a storage electrode contact plug by etching said conductive material layer using said contact plug mask;
- and
- removing said contact plug mask.
6 more elements
Dependencies are inferred from the claim text.