Low dielectric constant materials and processes

A thermal chemical vapor deposition process for depositing a Si-containing material on a surface, comprising

• providing a chemical vapor deposition chamber having disposed therein a substrate,
• introducing a gas to said chamber, wherein said gas is comprised of a first chemical precursor selected from the group consisting of
• siloxanes of the formula (R3Si)2O where each R is independently H, D, F, methyl, ethyl or propyl,
• (fluoroalkyl)fluorosiloxanes of the formula [((Rf)3-x-yR1xFy)Si]2O where Rf is a perfluoromethyl, perfluoroethyl or perfluoropropyl group, R1 is H or D, x is 0 or 1, y is 1 or 2, and x+y=1 or 2,
• (fluoroalkyl)silanes of the formula (Rf)4-aSiR1a where Rf is a perfluoromethyl, perfluoroethyl or perfluoropropyl group, R1 is H or D, and a is 0, 1, 2, or 3,
• (alkyl)fluorosilanes of the formula R24-bSiFb where R2 is methyl, ethyl or propyl, and b is 1, 2, or 3,
• (fluoroalkyl)fluorosilanes of the formula (Rf)4-c-bSiR1cFb where Rf is a perfluoromethyl, perfluorethyl or perfluoropropyl group, R1 is H or D, c is 0, 1, or 2, b is 1, 2, or 3, and c+b=1, 2, or 3,
• alkylsiloxysilanes of the formula (R3SiO)4-bSiRb where each R is independently H, D, F, methyl, ethyl or propyl, and b is 1, 2 or 3,
• alkoxysilanes of the formula (R2O)4-aSiR1a where R2 is methyl, ethyl or propyl, R1 is H or D, and a is 0, 1, 2, or 3,
• alkylalkoxysilanes of the formula (R2O)4-c-bSiR2bR1c where each R2 is independently methyl, ethyl or propyl, R1 is H or D, c is 0, 1, or 2, b is 1, 2, or 3, and c+b=1, 2, or 3,
• silylmethanes of the formula (H3Si)4-aCR1a where R1 is H or D, and a is 0, 1, 2, or 3,
• alkoxysilylmethanes of the formula (R2O)4-c-b(H3Si)bCR1c where R2 is methyl, ethyl or propyl, R1 is H or D, c is 0, 1, or 2,bis 1,2, or 3, and c+b=1, 2, or 3,
• alkylalkoxysilylmethanes of the formula (R2O)4-x-y-z(R2z(H3Si)yCR1x where each R2 is independently methyl, ethyl or propyl, R1 is H or D, x is 0 or 1, y is 1 or 2, z is 1 or 2, and x+y+z=2or 3,
• alkoxymethanes of the formula (R3O)4-aCR1a where R3 is methyl, ethyl, propyl, or t-butyl, R1 is H or D, and a is 0, 1, 2, or 3,
• alkylalkoxymethanes of the formula (R3O)4-c-bR2bCR1c where R3 is methyl, ethyl, propyl, or t-butyl, R2 is methyl, ethyl or propyl, R1 is H or D, c is 0, 1, or 2, b is 1, 2, or 3, and c+b=1, 2, or 3,
• and mixtures thereof,
• and depositing a Si-containing film onto said substrate by thermal chemical vapor deposition at a temperature of about 300° C. or higher, wherein said Si-containing film has a dielectric constant of about 3.5 or lower, as deposited.

A chemical vapor deposition process for depositing a Si-containing material on a surface, comprising

• providing a chemical vapor deposition chamber having disposed therein a substrate;
• introducing a gas to said chamber, wherein said gas is comprised of a first chemical precursor selected from the group consisting of
• silylmethanes of the formula (H3Si)4-aCR1a where R1 is H or D, and a is 0, 1, 2, or 3,
• alkoxysilylmethanes of the formula (R2O)4-c-b(H3Si)bCR1c where R2 is methyl, ethyl or propyl, R1 is H or D, c is 0, 1, or 2, b is 1, 2, or 3, and c+b=1, 2, or 3,
• alkylalkoxysilylmethanes of the formula (R2O)4-x-y-zR2z(H3Si)yCR1 x where each R2 is independently methyl, ethyl or propyl, R1 is H or D, x is 0 or 1, y is 1 or 2, z is 1 or 2, and x+y+z=2 or 3,
• alkoxymethanes of the formula (R3O)4-aCR1a where R3 is methyl, ethyl, propyl, or t-butyl, R1 is H or D, and a is 0, 1, 2, or 3,
• alkylalkoxymethanes of the formula (R3O)4-c-bR2bCR1c where R3 is methyl, ethyl, propyl, or t-butyl, R2 is methyl, ethyl or propyl, R1 is H or D, c is 0, 1, or 2, b is 1, 2, or 3, and c+b=1, 2, or 3,
• and mixtures thereof, and
• depositing a Si-containing film onto said substrate, wherein said Si-containing film has a dielectric constant of about 3.5 or lower, as deposited.

A chemical vapor deposition process for depositing a Si-containing material on a surface, comprising providing a chemical vapor deposition chamber having disposed therein a substrate;

• introducing a first gas to said chamber, wherein said first gas is comprised of a first chemical precursor,
• depositing a first Si-containing film onto said substrate, wherein said first Si-containing film has a dielectric constant of about 3.5 or lower, as deposited, and wherein said first Si-containing film has a thickness in the range of about 50 Å to about 5000 Å,
• introducing a second gas to said chamber, wherein said second gas is comprised of a second chemical precursor different from said first chemical precursor, and
• depositing a second Si-containing film onto said first Si-containing film to provide a multi-layered Si-containing film,
• wherein said second Si-containing film has a dielectric constant of about 3.5 or lower, as deposited, wherein said second Si-containing film has a thickness in the range of about 50 Å to about 5000 Å, and wherein said multi-layered Si-containing film has a dielectric constant of about 3.5 or lower, as deposited.

A multi-layered film comprised of at least a first layer and a second layer in contact with said first layer, wherein

• said first layer is comprised of an amount of silicon in the range of about 1% to about 60%, an amount of carbon in the range of about 10% to about 90%, an amount of oxygen in the range of 0% to about 35%, and an amount of fluorine in the range of 0% to about 67%, each by weight based on total weight;
• and
• said second layer is comprised of an amount of silicon in the range of about 1% to about 50%, an amount of carbon in the range of about 10% to about 60%, an amount of oxygen in the range of 0% to about 30%, and an amount of fluorine in the range of 0% to about 67%, each by weight based on total weight, wherein said multi-layer film has a dielectric constant of about 3.0 or lower, and
• wherein said second layer has an elemental composition that is substantially different from said first layer.