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US 2001/0054933 A1Published application
High frequency amplifier bias circuit, high frequency power amplifier, and communication device
AssigneeFujitsu Quantum Devices Limited
InventorNaoyuki Miyazawa
Life of this patent
Estimating the term…
Abstract
In the high frequency amplifier bias circuit, an emitter-follower-transistor, which serves to supply a bias electric current corresponding to a control input voltage input from outside, is connected to a base of the transistor for amplification. The transistor for current control is connected in series to emitter of the transistor for bias supply, and bypasses electric current corresponding to the control input voltage. Electric current corresponding to the control input voltage flows through the first transistor for temperature compensation. Electric current corresponding to electric current flowing through the first transistor for temperature compensation flows through the transistor for current control.
Claims31
A high frequency amplifier bias circuit comprising:
- a control input terminal to which a control signal is input from outside;
- a transistor for bias supply which supplies a bias electric current which corresponds to the control signal to a bias input section of a transistor for amplification;
- and
- a transistor for limiting electric current which is connected in series to said transistor for bias supply at a node of the bias input section of said transistor for amplification and said transistor for bias supply, and which bypasses an electric current which corresponds to the control signal.
1 more element
A high frequency power amplifier comprising:
- a transistor for amplification;
- and a bias circuit which supplies a bias electric current to said transistor for amplification, wherein said bias circuit includes,
- a control input terminal to which a control signal is input from outside;
- a transistor for bias supply which supplies a bias electric current corresponding to the control signal to a bias input section of said transistor for amplification;
- and
- a transistor for limiting electric current which is connected in series to said transistor for bias supply at a node of the bias input section of said transistor for amplification and said transistor for bias supply, and which bypasses an electric current which corresponds to the control signal.
3 more elements
A high frequency power amplifier comprising:
- a transistor for amplification having a bias input section;
- and a plurality of bias circuits each of which supplies a bias electric current to said transistor for amplification, wherein each of said bias circuit includes,
- a control input terminal to which a control signal is input from outside;
- a transistor for bias supply which supplies a bias electric current corresponding to the control signal to said bias input section of said transistor for amplification;
- and
- a transistor for limiting electric current which is connected in series to said transistor for bias supply at a node of said bias input section of said transistor for amplification and said transistor for bias supply, and which bypasses an electric current which corresponds to the control signal.
3 more elements
A high frequency power amplifier comprising:
- a plurality of amplifiers connected in parallel, each amplifier including,
- a transistor for amplification having a bias input section;
- and
- a bias circuit which supplies a bias electric current to said transistor for amplification, wherein said bias circuit includes,
- a control input terminal to which a control signal is input from outside;
- a transistor for bias supply which supplies a bias electric current corresponding to the control signal to said bias input section of the corresponding transistor for amplification;
- and
- a transistor for limiting electric current which is connected in series to said transistor for bias supply at a node of said bias input section of said corresponding transistor for amplification and said transistor for bias supply, and which bypasses an electric current which corresponds to the control signal.
5 more elements
A communication device comprising:
- in an RF front end circuit, a high frequency power amplifier in which a transistor for amplification having a bias input section and a bias circuit which supplies bias electric current to said transistor for amplification are formed on the same semiconductor substrate, wherein said bias circuit includes,
- a control input terminal to which an input signal is input from outside;
- a transistor for bias supply which supplies a bias electric current corresponding to the control signal to said bias input section of said transistor for amplification;
- and
- a transistor for limiting electric current which is connected in series to said transistor for bias supply at a node of said bias input section of said transistor for amplification and said transistor for bias supply, and which bypasses an electric current which corresponds to the control signal.
2 more elements
A communication device comprising:
- in an RF front end circuit, a high frequency power amplifier in which a transistor for amplification having a bias input section and a bias circuit which supplies bias electric current to said transistor for amplification are formed on the same semiconductor substrate, wherein said bias circuit includes,
- a control input terminal to which an input signal is input from outside;
- a transistor for bias supply which supplies a bias electric current corresponding to the control signal to said bias input section of said transistor for amplification;
- and
- a transistor for limiting electric current which is connected in series to said transistor for bias supply at a node of said bias input section of said transistor for amplification and said transistor for bias supply, and which bypasses an electric current which corresponds to the control signal.
2 more elements
A communication device comprising:
- in an RF front end circuit, a high frequency power amplifier in which a plurality of amplifiers are connected in parallel, each of said amplifier being provided with a transistor for amplification having a bias input section and a bias circuit which supplies bias electric current to said transistor for amplification, said amplifiers being formed on the same semiconductor substrate, wherein each bias circuit includes,
- a control input terminal to which an input signal is input from outside;
- a transistor for bias supply which supplies a bias electric current corresponding to the control signal to said bias input section of the corresponding transistor for amplification;
- and
- a transistor for limiting electric current which is connected in series to said transistor for bias supply at a node of said bias input section of said corresponding transistor for amplification and said transistor for bias supply, and which bypasses an electric current which corresponds to the control signal.
2 more elements
Dependencies are inferred from the claim text.