Semiconductor device having a lower electrode aperture that is larger than the photolithography resolution of the capacitor pattern

A method for manufacturing a semiconductor device, which is provided a capacitor comprising a first electrode, dielectric layer, and second electrode, comprises steps of:

• forming a first insulating film, a second insulating film, and a resist film, in that order, on the principal surface of an underlying layer;
• forming a first opening, as a capacitor pattern, in said resist film using photolithography;
• forming an initial pocket in said first insulating film by anisotropic etching of said second and first insulating films, in that order, with the mask being this resist film in which said capacitor pattern is formed, until the principal surface of said underlying layer is exposed;
• forming a pocket, wider than said initial pocket, in the first insulating film by isotropic etching of the inner walls of said initial pocket, with said remaining second insulating film as a mask;
• forming a conductive film on the wall surface and floor surface of said pocket;
• patterning said conductive film and forming a first electrode;
• and
• forming a dielectric layer and second electrode, in that order, on said first electrode.

A method for manufacturing a semiconductor device, which is provided a capacitor comprising a first electrode, dielectric layer, and second electrode, comprises steps of:

• forming a first insulating film, a second insulating film, and a resist film, in that order, on the principal surface of an underlying layer;
• forming a first opening, as a capacitor pattern, in said resist film using photolithography;
• forming an initial pocket in said second insulating film by anisotropic etching of said second insulating film, with the mask being this resist film in which said capacitor pattern is formed, until the upper surface of said first insulating film is exposed;
• forming a pocket, wider than said initial pocket, in the first insulating film by isotropic etching of the inner walls of said initial pocket, with said remaining second insulating film as a mask, until the principal surface of said underlying layer is exposed;
• forming a conductive film on the wall surface and floor surface of said pocket;
• patterning said conductive film and forming a first electrode;
• and
• forming a dielectric layer and second electrode, in that order, on said first electrode.

A method for manufacturing a semiconductor device, which is provided a capacitor comprising a first electrode, dielectric layer, and second electrode, comprises steps of:

• forming a first insulating film, a second insulating film, and a resist film, in that order, on the principal surface of an underlying layer;
• forming a first opening, as a capacitor pattern, in said resist film using photolithography;
• forming an initial pocket in the first insulating film by anisotropic etching of said second and first insulating films, in that order, with the mask being the resist film in which said capacitor pattern is formed, until partway through said first insulating film;
• forming a pocket, wider than said initial pocket, in said first insulating film by isotropic etching of the inner walls of said initial pocket, with said remaining second insulating film as a mask, until the principal surface of said underlying layer is exposed;
• forming a conductive film on the wall surface and floor surface of said pocket;
• patterning said conductive film and forming a first electrode;
• and
• forming a dielectric layer and second electrode, in that order, on said first electrode.

A method for manufacturing a semiconductor device, which is provided a capacitor comprising a first electrode, dielectric layer, and second electrode, comprises steps of:

• forming a first insulating film, a second insulating film, and a resist film, in that order, on the principal surface of an underlying layer;
• forming a first opening, as a capacitor pattern, in said resist film using photolithography;
• forming a standard initial pocket in said second insulating film by anisotropic etching of said second insulating film with the mask being the resist film in which said capacitor pattern is formed;
• forming an initial pocket in said first insulating film by isotropic etching of said first insulating film, with the mask being said remaining second insulating film, until partway through said first insulating film;
• forming a pocket, wider than said initial pocket, in said first insulating film by anisotropic etching of the inner walls of said initial pocket, with said remaining second insulating film as a mask, until the principal surface of said underlying layer is exposed;
• forming a conductive film on the wall surface and floor surface of said pocket;
• patterning said conductive film and forming a first electrode, and
• forming a dielectric layer and second electrode, in that order, on said first electrode.