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US 2001/0054677 A1Published application
Solid-state imaging device and method for producing the same
AssigneeSharp Kabushiki Kaisha
InventorYoshimitsu Nakashima
Life of this patent
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Abstract
A solid-state imaging device includes a semiconductor substrate, a light shielding section having an aperture for partially shielding light incident on a surface of the semiconductor substrate, a light reception section for converting the light which is incident on the surface of the semiconductor substrate through the aperture to an electric charge, and a passivation section having a substantially flat top surface and overlying the light shielding section, the light reception section and the aperture.
Claims8
A solid-state imaging device, comprising:
- a semiconductor substrate;
- a light shielding section having an aperture for partially shielding light incident on a surface of the semiconductor substrate;
- a light reception section for converting the light which is incident on the surface of the semiconductor substrate through the aperture to an electric charge;
- and
- a passivation section having a substantially flat top surface and overlying the light shielding section, the light reception section and the aperture.
2 more elements
A method for producing a solid-state imaging device, wherein the device comprises:
- a semiconductor substrate;
- a light shielding section having an aperture for partially shielding light incident on a surface of the semiconductor substrate;
- a light reception section for converting the light which is incident on the surface of the semiconductor substrate through the aperture to an electric charge;
- and
- a passivation section having a substantially flat top surface and overlying the light shielding section, the light reception section and the aperture, wherein the method comprises the steps of:
- forming a thin film used for forming the passivation section on the light shielding section and the aperture;
- and
- flattening a surface of the thin film to form the passivation section by chemical machine polishing.
5 more elements
A method for producing a solid-state imaging device, wherein the device comprises:
- a semiconductor substrate;
- a light shielding section having an aperture for partially shielding light incident on a surface of the semiconductor substrate;
- a light reception section for converting the light which is incident on the surface of the semiconductor substrate through the aperture to an electric charge;
- and
- a passivation section having a substantially flat top surface and overlying the light shielding section, the light reception section and the aperture, wherein the method comprises the steps of:
- forming a thin film used for forming the passivation section on the light shielding section;
- applying an SOG film to the thin film used for forming the passivation section;
- and
- performing an etchback technique under a condition that a selective ratio of the SOG film to the thin film used for forming the passivation section is about 1:1.
6 more elements
A method for producing a solid-state imaging device, wherein the device comprises:
- a semiconductor substrate;
- a light shielding section having an aperture for shielding light incident on a surface of the semiconductor substrate;
- a light reception section for converting the light which is incident on the surface of the semiconductor substrate through the aperture to an electric charge;
- a passivation section having a substantially flat top surface and overlying the light shielding section, the light reception section and the aperture;
- and
- an insulation section having a substantially flat top surface which is interposed between the passivation section and the light shielding section, wherein the method comprises the steps of:
- forming the insulation section on the light shielding section;
- flattening a surface of the insulation section by chemical machine polishing;
- and
- forming the passivation section so as to have the substantially flat top surface by depositing a material used for forming the passivation section on the insulation section.
7 more elements
A method for producing a solid-state imaging device, wherein the device comprises:
- a semiconductor substrate;
- a light shielding section having an aperture for partially shielding light incident on an surface of the semiconductor substrate;
- a light reception section for converting the light which is incident on the surface of the semiconductor substrate through the aperture to an electric charge;
- a passivation section having a substantially flat top surface and overlying the light shielding section, a light reception section and the aperture;
- and
- an insulation section having a substantially flat top surface which is interposed between the passivation section and the light shielding section, wherein the method comprises the steps of:
- forming the insulation section so as to have the substantially flat top surface by applying an SOG film to the light shielding section and the aperture;
- and
- forming the passivation section so as to have the substantially flat top surface by depositing a material used for forming the passivation section on the insulation section.
6 more elements
Dependencies are inferred from the claim text.