Method for producing a semiconductor device

Abstract

A producing method of the present invention includes (i) forming a wiring line above a semiconductor substrate, (ii) forming an insulating layer above the semiconductor substrate and the wiring line, (iii) forming an opening penetrating the insulating layer in the insulating layer with respect to a portion above the wiring line, (iv) forming a barrier layer whose surface is formed of a material A, so as to cover a surface of the insulating layer and an inner surface of the opening, (v) forming a metal layer made of a first metal on the barrier layer, and (vi) depositing a second metal inside the opening by a plating, thus forming a via plug containing the second metal. A rest potential PA of the material A with respect to the second metal is larger than a rest potential PM of the first metal with respect to the second metal.

Dependencies are inferred from the claim text.