Method for switching between modes of operation
AssigneeMicron Technology, Inc.
InventorsJEFFREY S. MAILLOUX, KEVIN J. RYAN, TOBB A. MERRITT, BRETT L. WILLIAMS
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AssigneeMicron Technology, Inc.
InventorsJEFFREY S. MAILLOUX, KEVIN J. RYAN, TOBB A. MERRITT, BRETT L. WILLIAMS
Estimating the term…
An integrated circuit memory device is designed for high speed data access and for compatibility with existing memory systems. An address strobe signal is used to latch a first address. During a burst access cycle the address is incremented internal to the device with additional address strobe transitions. A new memory address is only required at the beginning of each burst access. Read/Write commands are issued once per burst access eliminating the need to toggle the Read/Write control line at the device cycle frequency. Transitions of the Read/Write control line during a burst access will terminate the burst access, reset the burst length counter and initialize the device for another burst access. The device is compatible with existing Extended Data Out DRAM device pinouts, Fast Page Mode and Extended Data Out Single In-Line Memory Module pinouts, and other memory circuit designs. Additionally, a DRAM is provided having both pipelined and burst Extended Data Out modes of operation and the ability to switch between them.
A storage device comprising:
A storage device comprising:
A memory circuit comprising:
A method for accessing a storage device, the method comprising steps of:
A method for accessing a random access memory comprising steps of:
A memory integrated circuit comprising:
A memory module comprising:
Method for accessing several different locations in an asynchronously-accessible memory device, the method comprising steps of:
A system comprising:
Method for switching between modes of operation, the method comprising steps of:
Method for switching between modes of operation, the method comprising steps of:
Dependencies are inferred from the claim text.