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AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Sujit Sharan
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In one aspect, the invention includes a semiconductor processing method comprising exposing silicon, nitrogen and oxygen in gaseous form to a high density plasma during deposition of a silicon, nitrogen and oxygen containing solid layer over a substrate. In another aspect, the invention includes a gate stack forming method, comprising: a) forming a polysilicon layer over a substrate; b) forming a metal silicide layer over the polysilicon layer; c) depositing an antireflective material layer over the metal silicide utilizing a high density plasma; d) forming a layer of photoresist over the antireflective material layer; e) photolithographically patterning the layer of photoresist to form a patterned masking layer from the layer of photoresist; and f) transferring a pattern from the patterned masking layer to the antireflective material layer, metal silicide layer and polysilicon layer to pattern the antireflective material layer, metal silicide layer and polysilicon layer into a gate stack.
A semiconductor processing method comprising:
A semiconductor processing method comprising exposing silicon, nitrogen and oxygen in gaseous form to a high density plasma during deposition of a silicon, nitrogen and oxygen containing solid layer over a substrate.
A semiconductor processing method comprising:
A transistor gate stack forming method comprising:
Dependencies are inferred from the claim text.