Method Of Forming Silicon Oxynitride Films
AssigneeAdvanced Micro Devices, Inc.
InventorsSey-Ping Sun, Homi Nariman, Hartmut Ruelke
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Abstract
The present invention is directed to a method of forming process layers comprised of silicon oxynitride. In one embodiment, the method comprises positioning a wafer in a process chamber, introducing silane and nitrous oxide into the chamber at a flow rate ratio ranging from approximately 2.6-3.8 silane to nitrous oxide, and generating a plasma in the chamber using a high frequency to low frequency power setting ratio ranging from approximately 1.2-1.8.
Claims14
A method of forming a layer of silicon oxynitride above a wafer, comprising:
- positioning said wafer in a process chamber;
- introducing silane and nitrous oxide into said chamber at a flow rate ratio ranging from approximately 2.6-3.8 silane to nitrous oxide;
- and
- generating a plasma in said chamber using a high frequency to low frequency power setting ratio ranging from approximately 1.2-1.8.
A method of forming a layer of silicon oxynitride above a wafer, comprising:
- positioning said wafer in a process chamber;
- introducing approximately 435-475-standard cubic centimeters per minute of silane and approximately 125-165 standard cubic centimeters per minute of nitrous oxide into said chamber;
- and
- generating a plasma in said chamber using a high frequency power setting of approximately 510-610 watts and a low frequency power setting of approximately 330-430 watts.
A method of forming a layer of silicon oxynitride above a wafer, comprising:
- positioning said wafer in a process chamber;
- introducing approximately 435-475-standard cubic centimeters per minute of silane and approximately 125-165 standard cubic centimeters per minute of nitrous oxide and approximately 7500-8500 standard cubic centimeters per minute of nitrogen into said chamber;
- generating a plasma in said chamber using a high frequency power setting of approximately 510-610 watts and a low frequency power setting of approximately 330-430 watts;
- maintaining a pressure in said chamber from approximately 2.7-3.3 Torr;
- and
- maintaining a temperature in said chamber ranging from approximately 380-420° C.
Dependencies are inferred from the claim text.