Porous region removing method and semiconductor substrate manufacturing method
AssigneeCanon Kabushiki Kaisha
InventorsKIYOFUMI SAKAGUCHI, KAZUTAKA YANAGITA
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Abstract
A given planarity of the underlying layer is ensured after removal of a porous layer. In the first step, a porous layer is filled with a preprocess solution (e.g., water). In the second step, the preprocess solution filling the porous layer is replaced with an etchant (e.g., fluoric acid), and the porous layer is etched by the etchant. With this process, the time in which the porous layer is filled with the etchant is shortened to suppress variations in progress of etching.
Claims50
A porous region removing method for removing a porous region from a substrate having the porous region, comprising:
- the first step of filling the porous region with a first process solution having no etching function or weak etching function for a porous material;
- and
- the second step of etching the porous region using a second process solution having an etching function for a porous material after the first step.
A porous region removing apparatus for removing a porous region from a substrate having the porous region, comprising:
- means for executing the first step of filling the porous region with a first process solution having no etching function or weak etching function for a porous material;
- and
- means for executing the second step of replacing the first process solution filling the porous region with the second process solution having an etching function for a porous material to etch the porous region.
Dependencies are inferred from the claim text.