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US 2001/0044201 A1Published application
Semiconductor device having a multilayer interconnection structure
AssigneeFujitsu Limited
InventorsHIROSHI KUDO, MASANOBU IKEDA, KENICHI WATANABE, YOSHIYUKI OHKURA
Life of this patent
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Abstract
A semiconductor device includes a multilayer interconnection structure including an organic interlayer insulation film in which a conductor pattern is formed by a damascene process, wherein the organic interlayer insulation film carries thereon an organic spin-on-glass film.
Claims25
A method of fabricating a semiconductor device, comprising the steps of:
- forming an interlayer insulation film on a substrate;
- forming an organic spin-on-glass film on said interlayer insulation film;
- patterning said organic spin-on-glass film and said interlayer insulation film to form a depression such that said depression penetrates through said organic spin-on-glass film and reaches said interlayer insulation film;
- depositing a conductor layer on said organic spin-on-glass film so as to fill said depression;
- and
- removing a part of said conductor layer locating above said organic spin-on-glass film by a chemical mechanical polishing process, to form a conductor pattern filling said depression, said chemical mechanical polishing process being conducted while using said organic spin-on-glass film as a polishing stopper.
3 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- forming an interlayer insulation film on a substrate;
- forming a groove in said interlayer insulation film;
- forming a conductor layer on said interlayer insulation film so as to fill said groove;
- removing a part of said conductor layer covering said interlayer insulation film by a chemical mechanical polishing process, to form a conductor pattern filling said groove;
- and
- applying an insulation film of a liquid form on said interlayer insulation film, such that said insulation film covers said conductor pattern.
3 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- forming a first interlayer insulation film on a substrate;
- forming a groove in said first interlayer insulation film;
- forming a conductor layer on said first interlayer insulation film so as to fill said groove;
- removing a part of said conductor layer covering said first interlayer insulation film by a chemical mechanical polishing process, to form a conductor pattern filling said groove;
- forming a second interlayer insulation film on said first interlayer insulation film so as to cover said conductor pattern;
- and
- planarizing said second interlayer insulation film by a chemical mechanical polishing process.
4 more elements
A semiconductor device, comprising:
- a substrate;
- an interlayer insulation film formed on said substrate;
- another insulation film formed on said interlayer insulation film;
- a depression penetrating through said another insulation film and reaching said interlayer insulation film;
- and
- a conductor pattern filling said depression;
- said another insulation film being formed of an organic spin-on-glass.
4 more elements
A semiconductor device, comprising:
- a substrate;
- a first interlayer insulation film formed on said substrate;
- a first depression formed in said first interlayer insulation film;
- a first conductor pattern filling said first depression;
- a second interlayer insulation film formed on said first interlayer insulation film so as to cover said first conductor pattern, said second interlayer insulation film having a planarized surface;
- a second depression formed in said second interlayer insulation film;
- and
- a second conductor pattern filling said second depression.
5 more elements
Dependencies are inferred from the claim text.