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US 2001/0044181 A1Published application
Semiconductor device and method for fabricating the same
AssigneeFujitsu Limited
InventorSHUNJI NAKAMURA
Life of this patent
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Abstract
The semiconductor device including a memory cell region and a peripheral circuit region on a semiconductor substrate 10 comprises a transfer transistor formed in the memory cell region, a capacitor constituted by a storage electrode 46 connected to one of diffused layers 20 of the transfer transistor and formed of a first conducting layer, a dielectric film 52 covering a sidewall of the storage electrode 46, and an opposed electrode 56 formed on the dielectric film 52; a conducting plug formed of the first conducting layer and connected to the peripheral circuit region of the semiconductor substrate 10; and a first interconnection 62 electrically connected to the conducting plug 48.
Claims56
A semiconductor device including a memory cell region and a peripheral circuit region of a semiconductor substrate, comprising:
- a transfer transistor formed in the memory cell region;
- a capacitor connected to one of diffused layers of the transfer transistor and including a storage electrode formed of a first conducting layer, a dielectric film covering a sidewall of the storage electrode and an opposed electrode formed on the dielectric film;
- a first conducting plug formed of the first conducting layer and connected to the peripheral circuit region of the semiconductor substrate;
- and
- a first interconnection electrically connected to the first conducting plug.
2 more elements
A method for fabricating a semiconductor device comprising:
- a storage electrode forming step of forming a plurality of storage electrodes on a base substrate;
- a dielectric film forming step of forming a dielectric film covering said a plurality of storage electrodes;
- and
- an opposed electrode forming step of depositing and etching back a first conducting film on the base substrate with the dielectric film formed on to form an opposed electrode filled between said a plurality of storage electrodes covered with the dielectric film and formed of the first conducting film.
1 more element
A method for fabricating a semiconductor device comprising:
- a storage electrode forming step of forming a plurality of storage electrodes in a first region of a base substrate and forming a first pillar-shaped conductor formed of the same conducting layer as the storage electrodes in a second region of the base substrate;
- a dielectric film forming step of forming a dielectric film covering said a plurality of storage electrodes;
- an opposed electrode forming step of depositing and etching back a first conducting film on the base substrate with the dielectric film formed on to form an opposed electrode filled between said a plurality of storage electrodes covered with the dielectric film and formed of the first conducting film;
- and
- an interconnection forming step of forming a first interconnection on the first pillar-shaped conductor and connected to the base substrate in the second region through the first pillar-shaped conductor.
2 more elements
A method for fabricating a semiconductor device comprising:
- a pillar-shaped conductor forming step of forming a pillar-shaped body formed in a first region of a base substrate and formed of a first conducting layer and a second conducting layer laid the latter on the former, and forming a first pillar-shaped conductor connected to a second region of the base substrate and formed of a first conducting layer and a second conducting layer laid the latter on the former;
- a sidewall film forming step of forming a sidewall film formed of a third conducting film on a sidewall of the pillar-shaped body and the first pillar-shaped conductor;
- a storage electrode forming step of selectively removing the second conducting film forming the pillar-shaped body and forming a crown-shaped storage electrode of the first conducting film and the sidewall in the first region;
- a dielectric film forming step of forming a dielectric film for covering the storage electrodes;
- an opposed electrode forming step of depositing and patterning a fourth conducting film on the base substrate with the dielectric film formed on and forming an opposed electrode covering the storage electrodes through the dielectric film;
- and
- an interconnection forming step of forming a first interconnection on the first pillar-shaped conductor and connected to the base substrate in the second region through the first pillar-shaped conductor.
4 more elements
A method for fabricating a semiconductor device comprising:
- a pillar-shaped conductor forming step of depositing and patterning a first conducting film on a base substrate and forming the first conducting film having an opening on a first region of the base substrate and having a first pillar-shaped conductor on a second region of the base substrate;
- a second conducting film forming step of forming a second conducting film on the first conducting film and the base substrate;
- a second conducting film removing step of removing the second conducting film, leaving the second conducting film on a inside wall and a bottom surface of the opening and on a sidewall of the first pillar-shaped conductor, and forming a storage electrode extended from the bottom surface of the opening to the inside wall of the opening, and a sidewall film formed on the sidewall of the first pillar-shaped conductor;
- a first conducting film removing step of removing the first conducting film except the first conducting film formed in the second region;
- a dielectric film forming step of forming a dielectric film covering a surface of the storage electrode;
- an opposed electrode forming step of depositing and patterning a fourth conducting film on the base substrate with the dielectric film formed on, and forming an opposed electrode covering the storage electrode through the dielectric film;
- and
- an interconnection forming step of forming a first interconnection formed on the first pillar-shaped conductor, and connected to the base substrate in the second region through the first pillar-shaped conductor.
5 more elements
A method for fabricating a semiconductor device comprising:
- an insulation film forming step of forming an insulation film on a base substrate;
- a storage electrode forming step of forming a storage electrode buried in the insulation film and buried in a first opening formed in a first region, and a first pillar-shaped conductor buried in the insulation film and buried in a second opening formed in a second region;
- an insulation film removing step of selectively removing the insulation film in the first region to expose a sidewall of the storage electrode;
- a dielectric film forming step of forming a dielectric film for covering a surface of the storage electrode;
- a opposed electrode forming step of forming an opposed electrode on the surface of the storage electrode through the dielectric film;
- and
- an interconnection forming step of forming a first interconnection disposed on the first pillar-shaped conductor and connected to the base substrate in the second region through the first pillar-shaped conductor.
4 more elements
Dependencies are inferred from the claim text.