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US 2001/0044178 A1Published application
Method of forming dielectric film with good crystallinity and low leak
AssigneeFujitsu Limited
InventorHiroshi Ashida
Life of this patent
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Abstract
A dielectric film forming method includes forming on a surface of underlie substance a film of an oxide dielectric material including lead or bismuth, treating a surface of the oxide dielectric film with solution of nitric acid, and crystallizing the oxide dielectric film by annealing the film to obtain an oxide dielectric film. This provides a method of forming a dielectric film with good dielectric characteristics.
Claims20
A method of forming a dielectric film, comprising the steps of:
- (a) forming on a surface of underlie substance a film of an oxide dielectric material including lead or bismuth;
- (b) dipping a surface of the oxide dielectric film in solution including nitric acid;
- and
- (c) crystallizing the oxide dielectric film, after the surface treatment, by annealing the film and thereby obtaining an oxide dielectric film.
1 more element
A method of forming a capacitor, comprising the steps of:
- (a) forming on a surface of a first conductive layer a film of an oxide dielectric material including lead or bismuth;
- (b) dipping a surface of the oxide dielectric film in solution including nitric acid;
- (c) crystallizing the oxide dielectric film, after the surface treatment, by annealing the film and thereby obtaining an oxide dielectric film;
- and
- (d) forming a second conductive layer on said oxide dielectric film.
2 more elements
A method of forming a semiconductor device, comprising the steps of:
- (x) forming on a semiconductor substrate a transistor including one pair of current electrodes and a control electrode;
- (y) covering the transistor with an inter-layer insulation film;
- (z) forming a lower electrode on said inter-layer insulation film;
- (a) forming on a surface of said lower electrode a film of an oxide dielectric material including lead or bismuth;
- (b) dipping a surface of the oxide dielectric film in solution including nitric acid;
- (c) crystallizing the oxide dielectric film, after the surface treatment, by annealing the film and thereby obtaining an oxide dielectric film;
- and
- (d) forming an upper electrode on said oxide dielectric film.
5 more elements
Dependencies are inferred from the claim text.