Micro heating of selective regions
AssigneeInternational Business Machines Corporation
InventorsHOWARD TED BARRETT, TOSHIHARU FURUKAWA, DONALD W. RAKOWSKI, JAMES ALBERT SLINKMAN
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Abstract
A method for selectively heating a substrate without damaging surrounding regions of the substrate. In particular, the invention provides for a method of selectively activating doped regions of a semiconductor device without damaging surrounding doped and activated regions. Specifically, the invention provides a laser anneal which activates locally doped regions, while surrounding doped and activated regions are protected using a reflective mask.
Claims15
A method for local activation comprising the steps of:
- providing a substrate having a first section and a second section, wherein the first section contains at least one doped and activated region;
- depositing a reflective mask over the first section to protect the at least one doped and activated region;
- implanting a dopant species in at least one region of the second section;
- and
- activating the dopant species.
A method for local activation of a semiconductor device including the steps of:
- depositing a reflective mask over a previously doped and activated first section of a substrate to prevent damage to the first section;
- implanting a dopant on a second section of the substrate;
- and
- activating the dopant of the second section.
A reflective mask for protecting underlaying regions of a semiconductor substrate upon dopant activation of adjacent regions of the substrate.
A semiconductor device comprising:
- a substrate having a previously doped and activated first section and a second section;
- a reflective mask over the first section to protect the first section from damage caused by further processing;
- and
- at least one inactivated doped region in the second section.
A semi-transparent layer of reflective material, having a topography with varying thickness, to allow for the selective activation of a doped region.
Dependencies are inferred from the claim text.