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US 2001/0044160 A1Published application
Method for fabricating a patterned metal-oxide-containing layer
AssigneeInfincon Technologies AG
InventorsWalter Hartner, Gunther Schindler, Volker Weinrich, Mattias Ahlstedt
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Abstract
The damage to edge sections which occurs during the patterning of a metal-oxide-containing layer can be compensated by the deposition of an annealing layer and a subsequent heat treatment step through which a material flow takes place from the annealing layer into the damaged edge sections. The metal-oxide-containing layer can form the dielectric of a storage capacitor of a DRAM memory cell.
Claims17
A method of fabricating a patterned metal-oxide-containing layer, which comprises the following method steps:
- providing a substrate;
- depositing a metal-oxide-containing layer on the substrate;
- patterning the metal-oxide-containing layer and thereby causing edge sections of the metal-oxide-containing layer to have a stoichiometric deficiency of a given element in the metal-oxide-containing layer;
- applying an annealing layer to cover the metal-oxide-containing layer at least on the edge sections, the annealing layer containing the given element of the metal-oxide-containing layer;
- and
- heat-treating to diffuse the given element from the annealing layer into regions of the edge sections of the metal-oxide-containing layer having the stoichiometric deficiency.
3 more elements
Dependencies are inferred from the claim text.