Semiconductor laser device capable of preventing degradation of characteristics
AssigneeNEC Corporation
InventorsTakahiro Arakida, Hitoshi Hotta
Life of this patent
Estimating the term…
Abstract
A semiconductor laser device includes an inner lower clad layer formed on a semiconductor layer, an active layer formed on the inner lower clad layer, an inner upper clad layer formed the active layer, a blocking layer formed on the inner upper clad layer to block current, wherein the blocking layer having a concave portion, and an outer upper clad layer formed to cover the blocking layer. Carriers are injected to the active layer through the outer upper clad layer and the concave portion of the blocking layer.
Claims16
A semiconductor laser device comprising:
- an inner lower clad layer formed on a semiconductor layer;
- an active layer formed on said inner lower clad layer;
- an inner upper clad layer formed said active layer;
- a blocking layer formed on said inner upper clad layer to block current, wherein said blocking layer having a concave portion;
- and
- an outer upper clad layer formed to cover said blocking layer, and
- wherein carriers are injected to said active layer through said outer upper clad layer and said concave portion of said blocking layer.
A method of manufacturing a semiconductor laser device, comprising the steps of:
- (a) forming an inner lower clad layer on a semiconductor layer;
- (b) forming an active layer on said inner lower clad layer;
- (c) forming an inner upper clad layer said active layer;
- (d) forming a blocking layer on said inner upper clad layer to block current;
- (e) forming a concave portion in said blocking layer;
- and
- (f) forming an outer upper clad layer to cover said blocking layer, such that carriers are injected to said active layer through said outer upper clad layer and said concave portion of said blocking layer.
Dependencies are inferred from the claim text.