Self-sustained pulsating laser diode
AssigneeNEC Corporation
InventorsMasaki Ohya, Hiroaki Fujii, Kenji Endo
Life of this patent
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Abstract
A self-sustained pulsating laser diode in which a region in an active layer functions as a saturable absorber has at least five and no more than ten quantum wells, p-type cladding layer flat part with a layer thickness of at least 300 nm and no greater than 500 nm, and a p-type cladding layer flat part with a carrier density of at least 1×1017 cm−3 and no greater than 5×1017 cm−3. This laser diode achieves a sufficiently small current distribution compared with the light distribution in the lateral direction, thereby enabling stable self-sustained pulsating operation up to a high temperature, which was difficult to achieve in the past.
Claims12
A self-sustained pulsating laser diode which having a double-heterostructure minimally comprising:
- a cladding layer of a first conductivity type;
- a multi-quantum well active layer;
- and
- a cladding layer of a second conductivity type each being arranged on a semiconductor substrate of the first conductivity type, wherein the number of said quantum wells being at least 5 and no greater than 10;
- and
- said layer thickness of a flat part of said cladding layer having a current blocking structure is at least 300 nm and no greater than 500 nm;
- and further wherein a carrier density in said flat part of the cladding layer having a current blocking structure is at least 1×1017 cm−3 and no greater than 5×1017 cm−3.
A self-sustained pulsating laser diode which having a double-heterostructure minimally comprising:
- a cladding layer of a first conductivity type;
- a multi-quantum well active layer;
- and
- a cladding layer of a second conductivity type each being arranged on a semiconductor substrate of the first conductivity type, wherein an effective refractive index difference parallel to the layer is at least 7×10−4 and no greater than 3×10−3, and further wherein a carrier density in a flat part of said cladding layer having a current blocking structure is at least 1×1017 cm−3 and no greater than 5×1017 cm−3.
A self-sustained pulsating laser diode which having a double-heterostructure minimally comprising:
- a cladding layer of a first conductivity type;
- a multi-quantum well active layer;
- and
- a cladding layer of a second conductivity type each being arranged on a semiconductor substrate of the first conductivity type, wherein the number of said quantum wells being at least 5;
- and
- said layer thickness of a flat part of said cladding layer having a current blocking structure is at least 300 nm;
- and further wherein an effective refractive index difference parallel to the layer (Δn) is at least 7×10−4 and no greater than 3×10−3.
Dependencies are inferred from the claim text.