Semiconductor laser emitting apparatus
AssigneeSony Corporation
InventorsTomoyuki Kitamura, Yuichi Hamaguchi
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Abstract
To stabilize the near field pattern (NFP) in a semiconductor laser emitting apparatus which emits a laser beam in a multi-lateral mode and extend the application fields of the apparatus. A semiconductor laser emitting apparatus, which emits a laser beam in a multi-lateral mode, and comprises a cladding layer in a stripe form formed on an active layer, wherein a current injection region of the semiconductor laser emitting apparatus has a difference in optical absorption loss between the inside and the outside of the current injection region, wherein the cladding layer disposed on the outside of the current injection region is formed so as to have a thickness of 0.7 μm or less.
Claims4
A semiconductor laser emitting apparatus which emits a laser beam in a multi-lateral mode, said semiconductor laser emitting apparatus comprising a cladding layer in a stripe form formed on an active layer, wherein:
- a current injection region of said semiconductor laser emitting apparatus has a difference in optical absorption loss between inside and outside of said current injection region, said cladding layer disposed on outside of said current injection region is formed so as to have a thickness of 0.7 μm or less.
A semiconductor laser emitting apparatus which emits a laser beam in a multi-lateral mode, said semiconductor laser emitting apparatus comprising a cladding layer in a stripe form formed on an active layer, wherein:
- a current injection region of said semiconductor laser emitting apparatus has a difference in optical absorption loss between inside and outside of said current injection region,
- said cladding layer is formed only in said current injection region.
Dependencies are inferred from the claim text.