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US 2001/0043629 A1Published application
Opto-electronic devices with multiple oxide apertures
OwnerDecai Sun, Constance Chang-Hasnain +1inventors
InventorsDecai Sun, Constance Chang-Hasnain, Mitch Jansen
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Abstract
A vertical cavity apparatus includes a die with a top surface and a plurality of planar electrically conducting layers. At least one of the layers is an oxide layer formed of an oxidizable material that is oxidized upon exposure to an oxidizing agent to convert the oxidizable material to an electrical insulator. A plurality of oxide apertures are formed by via holes connecting the top surface to the oxide layer. A majority of the individual oxide apertures have different sizes. An optoelectronic device is coupled to a single oxide aperture in the die.
Claims91
A vertical cavity apparatus, comprising:
- a die including a top surface and a plurality of planar electrically conducting layers, at least one of the layers being an oxide layer formed of an oxidizable material that is oxidized upon exposure to an oxidizing agent to convert the oxidizable material to an electrical insulator;
- a plurality of oxide apertures formed by via holes connecting the top surface to the oxide layer, a majority of individual oxide apertures having different sizes;
- and
- an optoelectronic device coupled to a single oxide aperture in the die.
1 more element
A vertical cavity apparatus, comprising:
- a die including a top surface and a plurality of planar electrically conducting layers, at least one of the layers being an oxide layer formed of an oxidizable material that is oxidized upon exposure to an oxidizing agent to convert the oxidizable material to an electrical insulator;
- a plurality of oxide apertures formed by trench structures connecting the top surface to the oxide layer, a majority of individual oxide apertures having different sizes;
- and
- an optoelectronic device coupled to a single oxide aperture in the die.
1 more element
A vertical cavity apparatus, comprising:
- a die including a top surface and a plurality of planar electrically conducting layers, at least one of the layers being an oxide layer formed of an oxidizable material that is oxidized upon exposure to an oxidizing agent to convert the oxidizable material to an electrical insulator;
- a plurality of oxide apertures formed by mesas connecting the top surface to the oxide layer, a majority of individual oxide apertures having different sizes;
- and
- an optoelectronic device coupled to a single oxide aperture in the die.
1 more element
A multi-mode device, comprising:
- a die including a top surface and a plurality of layers, at least one of the layers being an oxide layer formed of an oxidizable material that is oxidized upon exposure to an oxidizing agent to convert the oxidizable material to an electrical insulator, the die including a plurality of oxide apertures connecting the top surface to the oxide layer, a majority of individual oxide apertures having different sizes;
- a tunable laser coupled to a single oxide aperture in the die, the tunable laser including, a semiconductor active region positioned between upper and lower confining regions of opposite type semiconductor material, and first and second reflective members positioned at opposing edges of the active and confining regions, the laser producing an output beam.
An optical system, comprising:
- a die including a top surface and a plurality of layers, at least one of the layers being an oxide layer formed of an oxidizable material that is oxidized upon exposure to an oxidizing agent to convert the oxidizable material to an electrical insulator, the die including a plurality of oxide apertures connecting the top surface to the oxide layer, a majority of individual oxide apertures having different sizes;
- a tunable laser formed in one of the oxide apertures, the laser including an active region with first and second opposing reflectors that define a laser gain cavity;
- a first photodetector positioned outside of the laser gain cavity;
- and
- an adjustable wavelength selective filter that splits the output beam into a transmitted portion and a reflected portion, the adjustable wavelength selective filter being positioned at an angle 0 relative to the optical axis to provide an angular dependence of a wavelength reflection of the wavelength selective filter and direct the reflected output beam towards the first photodetector, wherein the wavelength selective filter provides wavelength selectivity by changing the angle θ and a ratio of the transmitted and reflected portions is a function of wavelength of output beam and the angle 0.
2 more elements
Dependencies are inferred from the claim text.