Polarization insensitive semiconductor optical amplifier
AssigneeSamsung Electronic Co., Ltd.
InventorsJong-Ryeol Kim, Jong-In Shim
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Abstract
Disclosed is a polarization insensitive semiconductor optical amplifier (SOA) in an optical amplifying element having a substrate and a multi-layer structure, crystal growth layer including an active layer formed on the substrate. In the inventive optical amplifier, the active layer is divided into first and second areas having different polarization modes. An electrode means independently applies currents to the first and second areas. Therefore, the polarization insensitive semiconductor optical amplifier is capable of separately controlling TE and TM polarization gains so as to approximately equalize the TE polarization gain to the TM polarization gain.
Claims15
A polarization insensitive semiconductor optical amplifier (SOA) in an optical amplifying element having a substrate and a multi-layer structure including an active layer formed on the substrate, the optical amplifier comprising:
- said active layer divided into first and second areas having different polarization modes;
- and,
- an electrode means for independently applying currents to the first and second areas.
Dependencies are inferred from the claim text.