Semiconductor device and method of fabricating the same
AssigneeSony Corporation
InventorTOSHIHARU YANAGIDA
Life of this patent
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Abstract
An adhesion layer made from Al film or Ti film is formed on Cu electrode pad portions as external connection terminals of a Cu interconnection layer of an LSI formed on the surface layer of a semiconductor substrate. A BLM film having a stacked structure of Cr/Cu/Au or Ti/Cu/Au is formed on the adhesion layer. Solder ball bumps made from Pb and Sn are formed on the BLM film. The adhesion layer ensures a high adhesion strength and a high electric contact characteristic between the Cu electrode pad portions and the BLM film, that is, between the Cu electrode pads and the solder ball bumps.
Claims5
A semiconductor device comprising:
- electrode pads provided on a base;
- and
- solder bumps formed on said electrode pads via a barrier metal film;
- wherein an adhesion layer is formed between said electrode pads and said barrier metal film for increasing the adhesion therebetween.
A method of fabricating a semiconductor device in which solder bumps are formed on electrode pads provided on a base via a barrier metal film, said method comprising:
- a first step of forming a passivation film in such a manner as to cover electrode pads;
- forming a resist film on the passivation film and patterning the resist film into a specific shape;
- and selectively etching the passivation film using the resist film as a mask to expose the electrode pads;
- a second step of forming an adhesion layer over the entire surface of the base;
- and removing a first portion, located on the resist film, of the adhesion layer together with the resist film by a lift-off method, to allow only a second portion, located on the electrode pads, of the adhesion layer to remain;
- and
- a third step of forming solder bumps on the second portion of the adhesion layer located on the electrode pads via a barrier metal film.
Dependencies are inferred from the claim text.