Semiconductor device having an improved interlayer contact and manufacturing method thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsMASAKAZU OKADA, KEIICHI HIGASHITANI, HIROSHI KAWASHIMA
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Abstract
A silicon semiconductor substrate has a plurality of active regions having an impurity region and an isolating region which electrically isolates these active regions from each other. The isolating region is formed of a silicon nitride film. A contact hole penetrates an interlayer insulating film and reaches an impurity region. In this semiconductor device, when the contact hole falls across the impurity region and the isolating region, an amount of erosion in the isolating region is reduced.
Claims13
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of impurity regions formed on the surface of said semiconductor substrate;
- said impurity regions having a predetermined depth;
- at least an isolating region formed on the surface of said semiconductor substrate to electrically isolate said impurity regions from each other;
- an interlayer insulating film formed on the surface of said silicon semiconductor substrate;
- a contact hole which penetrates said interlayer insulating film and reaching said impurity region and said isolating region across the boundary thereof;
- a contact material filled in said contact hole;
- wherein said isolating region includes a material having substantially high etching selectivity than said interlayer insulating film, and the bottom of said contact hole extends into said isolating region to the depth less than the depth of said impurity region.
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of active regions formed on the surface of said silicon semiconductor substrate;
- an isolating region formed on the surface of said silicon semiconductor substrate to electrically isolate said active regions from each other;
- an interlayer insulating film formed on the surface of said silicon semiconductor substrate;
- a contact hole which penetrates said interlayer insulating film and reaching said impurity region and said isolating region across the boundary thereof;
- a contact material filled in said contact hole;
- wherein said isolating region includes a material having substantially high etching selectivity than said interlayer insulating film at least at the interface with said active regions.
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of impurity regions formed on the surface of said semiconductor substrate, said impurity regions having a predetermined depth;
- an isolating region formed on the surface of said semiconductor substrate to electrically isolate said impurity regions from each other;
- an intermediate film formed on the entire surface of said semiconductor substrate;
- an interlayer insulating film formed on said intermediate film;
- and
- a contact hole which penetrates said interlayer insulating film and said intermediate film and reaching said impurity region and said isolating region across the boundary thereof;
- a contact material filled in said contact hole;
- wherein said intermediate film includes a material having substantially high etching selectivity than said interlayer insulating film, and the bottom of said contact hole extends into said isolating region to the depth less than the depth of said impurity region.
Dependencies are inferred from the claim text.