Monolithic compound semiconductor integrated circuit and method of forming the same
AssigneeNEC Corporation
InventorNaoki Furuhata
Life of this patent
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Abstract
A monolithically integrated semiconductor device comprises: a hetero-junction bipolar transistor having at least an electrode contact layer which contacts directly with at least one of collector, base and emitter electrodes; and at least a passive device having at least a passive device electrode and at least a resistive layer, wherein the electrode contact layer and the resistive layer comprise the same compound semiconductor layer.
Claims52
A monolithically integrated semiconductor device comprising:
- a hetero-junction bipolar transistor having at least an electrode contact layer which contacts directly with at least one of collector, base and emitter electrodes;
- and
- at least a passive device having at least a passive device electrode and at least a resistive layer,
- wherein said electrode contact layer and said resistive layer comprise the same compound semiconductor layer.
The device as claimed in claim i, wherein said passive device electrode and one of said collector, base and emitter electrodes comprises the same metal layer.
A monolithically integrated semiconductor device comprising:
- a hetero-junction bipolar transistor having at least an electrode contact layer which contacts directly with at least one of collector, base and emitter electrodes;
- and
- at least a passive device having at least a passive device electrode and at least a resistive layer,
- wherein said passive device electrode and one of said collector, base and emitter electrodes comprises the same metal layer.
A monolithically integrated semiconductor device comprising:
- a hetero-junction bipolar transistor having at least an electrode contact layer which contacts directly with at least one of collector, base and emitter electrodes;
- a resistive element which comprises:
- at least a resistive element layer;
- and at least a resistive element electrode;
- and
- a metal-insulator-metal capacitor which comprises:
- a bottom electrode;
- a capacitive dielectric layer;
- and a top electrode,
- wherein said electrode contact layer, said resistive element layer and said capacitive dielectric layer comprise the same compound semiconductor layer, and
- wherein said resistive element electrode, said top electrode and said at least one of collector, base and emitter electrodes comprises the same metal layer.
A method of forming a monolithically integrated semiconductor device comprising:
- a hetero-junction bipolar transistor having at least an electrode contact layer which contacts directly with at least one of collector, base and emitter electrodes;
- and at least a passive device having at least a passive device electrode and at least a resistive layer,
- wherein said electrode contact layer and said resistive layer are formed concurrently in the same processes.
A method of forming a monolithically integrated semiconductor device comprising:
- a hetero-junction bipolar transistor having at least an electrode contact layer which contacts directly with at least one of collector, base and emitter electrodes;
- and at least a passive device having at least a passive device electrode and at least a resistive layer,
- wherein said passive device electrode and one of said collector, base and emitter electrodes are formed concurrently in the same processes.
A monolithically integrated semiconductor device comprising:
- a hetero-junction bipolar transistor having at least an electrode contact layer which contacts directly with at least one of collector, base and emitter electrodes;
- a resistive element which comprises:
- at least a resistive element layer;
- and at least a resistive element electrode;
- and a metal-insulator-metal capacitor which comprises:
- a bottom electrode;
- a capacitive dielectric layer;
- and a top electrode,
- wherein said electrode contact layer, said resistive element layer and said capacitive dielectric layer are formed concurrently in the same processes, and
- wherein said resistive element electrode, said top electrode and said at least one of collector, base and emitter electrodes are formed concurrently in the same processes.
Dependencies are inferred from the claim text.