Nitride gallium compound semiconductor light emission device
AssigneeSharp Kabushiki Kaisha
InventorsToshio Hata, Kensaku Yamamoto, Taiji Morimoto
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Abstract
A gallium nitride compound semiconductor light emission device includes: a substrate; an n-type electrode region comprising an n-type transmissive electrode; a gallium nitride compound semiconductor multilayer structure including an active layer; and a p-type electrode region comprising a p-type transmissive electrode. The p-type transmissive electrode and the n-type transmissive electrode transmit light which is generated in the active layer and reflected from the substrate so that the light exits the light emission device.
Claims11
A gallium nitride compound semiconductor light emission device comprising:
- a substrate;
- an n-type electrode region comprising an n-type transmissive electrode;
- a gallium nitride compound semiconductor multilayer structure including an active layer:
- and
- a p-type electrode region comprising a p-type transmissive electrode,
- wherein the n-type transmissive electrode is of a type which is substantially transparent.
Dependencies are inferred from the claim text.