Solid-state image pickup device and method for fabricating the same
AssigneeNEC Corporation
InventorsKeisuke Hatano, Yasutaka Nakashiba
Life of this patent
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Abstract
A solid-state image pickup device is formed such that a charge transfer electrode, a field plate electrode, and a gate electrode are formed of an electrically conductive single-layer electrode material film, and the gaps between the electrodes are filled with an insulating film having a reflow property to be flattened, thereby reducing the height of the device and alleviating the irregularities of the surface. This makes it possible to reduce the thickness of the flattening film required for flattening the device upon formation of micro-lenses and provide an improved sensitivity to the solid-state image pickup device.
Claims43
A solid-state image pickup device comprising
- first and second insulating films formed on a surface of a semiconductor substrate,
- a solid-state image pickup region having, as a charge transfer electrode, an electrically conductive single-layer material film formed on said first insulating film, and
- a peripheral circuit region formed on said semiconductor substrate other than in said solid-state image pickup region, a device in said peripheral circuit region being isolated from another device by means of an isolating electrode on said second insulating film, and said isolating electrode being formed of said single-layer conductive material film.
A method for fabricating a solid-state image pickup device, comprising the steps of:
- forming, in a solid-state image pickup region of a semiconductor substrate, a first diffusion layer for isolating a device from another in said solid-state image pickup region and in a peripheral circuit region other than the solid-state image pickup region of said semiconductor substrate, a second diffusion layer for isolating a device from another in said peripheral circuit region, respectively,
- forming, on a surface of the semiconductor substrate of said solid-state image pickup region, a first insulating film and on a surface of the semiconductor substrate of said peripheral circuit region, at least a second insulating film, respectively,
- depositing an electrically conductive electrode material film on a surface of the semiconductor substrate including said first and second insulating films, and
- forming a charge transfer electrode on said first insulating film of said solid-state image pickup region by patterning said electrically conductive electrode material film and an isolating electrode on said second insulating film of said peripheral circuit region, respectively.
Dependencies are inferred from the claim text.