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US 2001/0042290 A1Published application
Method of forming electrode film
AssigneeMurata Manufacturing Co., Ltd.
InventorsMasayuki Yoneda, Yoshihiro Koshido, Makoto Tose, Masatoshi Nakagawa
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Abstract
A method of forming an electrode film using a vacuum deposition apparatus, includes the steps of depositing a refractory metal on a substrate after reaching a back pressure in a deposition chamber at a pressure that is within a range of about 1×10−4 Pa to about 5′10−3 Pa, and annealing the substrate on which the metal is deposited to decrease the electrical resistivity of the electrode film.
Claims13
A method of forming an electrode film using a vacuum deposition apparatus, the method comprising the steps of:
- depositing a refractory metal on a substrate after reaching a back pressure in a deposition chamber at a pressure in a range of about 1×10−4 Pa to about 5×10−3 Pa;
- and
- annealing the substrate on which the metal is deposited to decrease the electrical resistivity of the electrode film.
Dependencies are inferred from the claim text.