Tin contact barc for tungsten polished contacts
OwnerJeffrey A. Shields, Ramkumar Subramanian +1inventors
InventorsJEFFREY A. SHIELDS, RAMKUMAR SUBRAMANIAN, BHARATH RANGARAJAN
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OwnerJeffrey A. Shields, Ramkumar Subramanian +1inventors
InventorsJEFFREY A. SHIELDS, RAMKUMAR SUBRAMANIAN, BHARATH RANGARAJAN
Estimating the term…
The present invention provides improved critical dimension control on oxide films using a titanium nitride (TiN) antireflection coating (ARC). The present invention also provides for improved methods for forming more uniform local interconnects and contact holes through oxide films, by providing a TiN layer as an ARC layer. The TiN ARC layer is used in a process for etching contacts and filling the contacts with a barrier metal made out of Ti or TiN and a tungsten fill. The TiN layer is easily removed during a tungsten polish, which also removes the barrier metal. Additionally, the TiN can serve as a hardmask for the contact etch, since the chemistry is typically selective to TiN. This allows the resist to be thinned down, providing the lithography process with a larger process window.
A method for fabricating interconnecting lines and vias in a layer of insulating material comprising the steps of:
A method for fabricating interconnecting lines and vias in a layer of insulating material comprising the steps of:
A method for fabricating interconnecting lines and vias in a layer of insulating material comprising the steps of:
Dependencies are inferred from the claim text.