Semiconductor device and method for manufacturing semiconductor devices
AssigneeSeiko Epson Corporation
InventorsMAMORU ENDO, JUNICHI TAKEUCHI, MICHIO ASAHINA, EIJI SUZUKI, KAZUKI MATSUMOTO
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Abstract
A method for manufacturing a semiconductor device that fills contact holes with conductive material such as aluminum or an aluminum alloy. A semiconductor device is manufactured by the process of forming an opening such as a contact hole in an interlayer dielectric film formed on a semiconductor substrate having a device element formed thereon. A first film and a second film made of conductive material such as aluminum or an alloy containing aluminum are formed on the interlayer dielectric film and the opening. The second film is then gradually cooled.
Claims34
A method for manufacturing a semiconductor device, comprising:
- forming an opening in an interlayer dielectric film formed on a semiconductor substrate.
- forming a conductive coating over the interlayer dielectric film and covering said opening;
- and
- gradually cooling the formed conductive coating.
A method for manufacturing a semiconductor device, comprising:
- forming an opening in an interlayer dielectric film formed on a semiconductor substrate;
- performing heat treatment under reduced pressure and at substrate temperature to remove gasification components contained in the interlayer dielectric film;
- forming a conductive coating on surfaces of the interlayer dielectric film and the opening, wherein the step of forming the conductive coating comprises:
- forming a first conductive film over said interlayer dielectric film at a first temperature;
- and
- forming a second conductive film over said first conductive film at a second temperature that is higher than said first temperature;
- gradually cooling the formed conductive coating;
- wherein, said first and second conductive films are formed by a sputtering method.
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) forming a through hole in an interlayer dielectric film formed on a semiconductor substrate having an element;
- (b) forming a conductive film made of material containing aluminum on surfaces of the interlayer dielectric film and the through hole;
- and
- (c) gradually cooling the conductive film.
Dependencies are inferred from the claim text.