Method for doping spherical semiconductors
AssigneeBall Semiconductor, Inc.
InventorsEvangellos Vekris, Nainesh J. Patel, Murali Hanabe
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Abstract
A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and doping powder. The semiconductor spheres and dopant powder are then directed to a chamber defined within an enclosure. The chamber maintains a heated, inert atmosphere with which to diffuse the dopant to the semiconductor spheres.
Claims18
A method of doping a plurality of three dimensional substrates, the method comprising the steps of:
- embedding the plurality of three dimensional substrates in a dopant mixture to produce a powder mixture;
- heating the powder mixture to produce a plurality of doped three dimensional substrates;
- cooling the doped three dimensional substrates;
- removing the doped three dimensional substrates from the powder mixture;
- and
- etching the doped spherical shaped semiconductors.
An apparatus for doping a plurality of three dimensional substrates, the apparatus comprising:
- a chamber having a diffusion zone and a vaporization zone;
- a first carrier located in the diffusion zone for containing the plurality of three dimensional substrates;
- a second carrier located in the vaporization zone for containing a dopant;
- a heater associated with the vaporization zone for vaporizing the dopant;
- and
- an inlet for a carrier gas;
- whereby the carrier gas may move through the vaporization zone to combine with the vaporized dopant, and then to the diffusion zone to provide the vaporized dopant to the plurality of three dimensional substrates.
An apparatus for doping a plurality of spherical substrates, the apparatus comprising:
- a chamber for containing the plurality of spherical substrates;
- a rotator for rotating the chamber about an axis;
- an inlet to the chamber;
- and
- a source for a vaporized dopant, the source being connected to the inlet;
- whereby a carrier gas, combine with the vaporized dopant, may move through the inlet to provide the vaporized dopant to the plurality of spherical substrates;
- and
- wherein the plurality of spherical substrates are rotated by the rotation of the chamber about the axis to promote uniform diffusion.
An apparatus for doping a plurality of three dimensional substrates, the apparatus comprising:
- a chamber for containing the plurality of three dimensional substrates;
- a carrier located in the chamber for containing the plurality of three dimensional substrates;
- a dopant sleeve located outside of the chamber;
- an inlet connecting the chamber to the dopant sleeve;
- and
- a heater for vaporizing the dopant sleeve to produce a vaporized dopant;
- whereby a carrier gas, combine with the vaporized dopant, may move through the inlet to provide the vaporized dopant to the plurality of three dimensional substrates.
Dependencies are inferred from the claim text.