Polycrystal thin film forming method and forming system
AssigneeFujitsu Limited
InventorsAkito Hara, Kuninori Kitahara
Life of this patent
Estimating the term…
Abstract
A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.
Claims27
A polycrystal thin film forming method comprising the steps of:
- forming a semiconductor thin film on a substrate;
- and
- flowing a heated gas to the semiconductor thin film while applying an energy beam to the semiconductor thin film to melt the semiconductor thin film at a region the gas is being flowed, and crystallizing the semiconductor thin film in its solidification to form a polycrystal thin film.
A thin film transistor fabricating method comprising the steps of:
- forming a semiconductor thin film on a substrate;
- and
- applying an energy beam to the semiconductor thin film to melt the semiconductor thin film while flowing a heated gas to the semiconductor thin film, and crystallizing the semiconductor thin film in its solidification to form the polycrystal thin film.
A polycrystal thin film forming system comprising:
- a gas flowing means for flowing a heated gas to a semiconductor thin film formed on a substrate;
- and
- an energy beam applying means for applying an energy beam to the semiconductor thin film to melt the semiconductor thin film at a region to which the gas is being applied.
A polycrystal silicon thin film forming method comprising the steps of:
- forming a silicon layer on a substrate;
- forming a heat reservoir layer on an upper surface of the silicon layer and side surfaces of the silicon layer;
- and
- applying the short pulsed laser beams to the silicon layer to crystallize the silicon layer.
A thin film transistor fabrication method comprising the steps of:
- forming a silicon layer on a substrate;
- forming a heat reservoir film on an upper surface of the silicon layer and side surfaces of the silicon layer;
- and
- applying short pulsed laser beams to the silicon layer to crystallize the silicon layer so as to form a channel layer.
A liquid crystal display device fabrication method comprising the steps of:
- forming a silicon layer on a substrate;
- forming a heat reservoir layer on an upper surface of the silicon layer and side surfaces of the silicon layer;
- and
- applying short pulsed laser beams to the silicon layer to crystallize the silicon layer so as to form a channel layer of a transistor.
Dependencies are inferred from the claim text.