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AssigneeAdvanced Technology Materials, Inc.
InventorsFrank S. Hintermaier, Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
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A low temperature CVD process using a tris (β-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
A method of depositing bismuth or a bismuth-containing film on a substrate from a precursor therefor, comprising vaporizing a bismuth β-diketonate precursor to form a vaporized precursor, and contacting the vaporized precursor with the substrate to deposit bismuth or a bismuth-containing film thereon.
A method of chemical vapor deposition of bismuth on a substrate, comprising vaporization of a tris (β-diketonate) bismuth complex to form a bismuth-containing vapor for said deposition.
A CVD process for depositing bismuth on a substrate from a bismuth precursor, comprising using as said bismuth precursor tris (β-diketonate) bismuth, and carrying out said CVD process at a deposition temperature not exceeding 600° C.
A CVD process for depositing an amorphous strontium bismuth tantalate film on a substrate from separate strontium, bismuth and tantalum precursors, comprising using as said bismuth precursor tris (β-diketonate) bismuth, and carrying out said CVD process at a deposition temperature not exceeding 450° C.
A CVD process for depositing a conformal bismuth film on a substrate from a bismuth precursor, comprising using as said bismuth precursor tris (β-diketonate) bismuth, and carrying out said CVD process at a deposition temperature not exceeding 450° C.
CVD formation of an amorphous film.
An amorphous SBT film formed on a substrate by CVD.
An SBT film having a 2Pr value measured in the range of from 750° C. to 800° C., which is in the range of from about 21 μC/cm2 to about 24.5 μC/cm2.
Dependencies are inferred from the claim text.