Method for fabricating ferroelectric field effect transistor
AssigneeSymetrix Corporation
InventorsKoji Arita, Shinichiro Hayashi, Tatsuo Otsuki, Carlos A. Paz de Araujo
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Abstract
A method for forming an interface insulator layer in a ferroelectric FET memory, in which a liquid precursor is applied to a semiconductor substrate. Preferably, the liquid precursor is an enhanced metalorganic decomposition (“EMOD”) precursor, applied using a liquid-source misted deposition technique. Preferably, the EMOD precursor solution applied to the substrate contains metal ethylhexanoates containing metal moieties in relative molar proportions for forming an interface insulator layer containing ZrO2, CeO2, Y2O3 or (Ce1−xZrx)O2, wherein 0≦x≦1.
Claims37
A method of fabricating a ferroelectric FET comprising steps of:
- preparing a semiconductor substrate;
- forming an interface insulator layer;
- forming a ferroelectric thin film;
- and
- forming a gate electrode;
- wherein said forming an interface insulator layer includes the steps of:
- providing a liquid precursor for said interface insulator layer;
- applying said liquid precursor to said substrate;
- and
- treating said substrate to form said interface insulator layer.
A ferroelectric FET comprising:
- a semiconductor substrate;
- an interface insulator layer comprising ZrO2;
- a ferroelectric thin film;
- and
- a gate electrode.
Dependencies are inferred from the claim text.