Compound semiconductor light emitting device and process for producing the same

A process for producing a compound semiconductor light emitting device, comprising:

• the first crystal growth step of epitaxially growing an InGaAs active layer and a second conductive type, first InP cladding layer in turn on/over a first conductive type substrate;
• the step of disposing an etching mask in a stripe form on/over the second conductive type, first InP cladding layer, and etching an area uncovered with the etching mask to such a depth that the etching reaches the first conductive substrate;
• the second crystal growth step of epitaxially growing a second conductive type InP sub-layer, a first conductive type InP sub-layer, and a second conductive type InP diffusion barrier layer in turn on/over an uncovered area of the first conductive type substrate which is uncovered with the etching mask;
• the step of removing off the etching mask;
• and
• the third crystal growth step of epitaxially growing a second conductive type, second InP cladding layer and a second conductive type InGaAs contact layer in turn on/over uncovered upper surfaces of the second conductive type, first InP cladding layer and the second conductive type diffusion barrier layer.