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US 2001/0040907 A1Published application
Optical device including carbon-doped contact layers
AssigneeAgere System Optoelectronics Guardian Corp.
InventorUTPAL KUMAR CHAKRABARTI
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Abstract
The invention is an optical device and method of fabrication which mitigates the problem of Zn migration in the cladding and waveguide regions. The contact region includes carbon, which acts as a p-type dopant in ternary semiconductor material.
Claims7
An optical device comprising:
- a semiconductor waveguide region;
- a cladding region including a dopant comprising Zn formed adjacent to the waveguide region;
- and
- a semiconductor contact region selected from InGaAs and InGaAsP formed over the waveguide region, the contact region including a p-type dopant comprising carbon to provide sufficient conductivity to make low resistance contact the waveguide region.
1 more element
A method for fabricating an optical device comprising the steps of:
- epitaxially forming, a semiconductor waveguide region over a substrate;
- forming a cladding region adjacent to said waveguide region, the cladding region including a dopant comprising Zn;
- and
- epitaxially forming a contact region selected from InGaAs and InGaAsP over the waveguide region, the contact layer including a p-type dopant comprising carbon to provide a sufficient conductivity to make low resistance contact to the waveguide region.
1 more element
Dependencies are inferred from the claim text.