Multiplewavelength semiconductor laser device array and production method

Abstract

The present invention provides a multiple wavelength semiconductor laser device array having approximately the same optical output levels of inducing the kink and the COD. The multiple wavelength semiconductor laser device array has the same construction as that of a conventional two-wavelength semiconductor laser device array except thickness of reflection films at light emitting end faces. The thickness of the reflection films deposited on the light emitting end faces of the two-wavelength semiconductor laser device array are determined so as to have a lower reflectivity at a light emitting end face of a 650 nm band semiconductor laser device consisting AlGaInP type four-element compound semiconductor which may induce the kink and the COD more easily, than a reflectivity at a light emitting end face of a 780 nm band semiconductor laser device consisting AlGaAs type three-element compound semiconductor.

Dependencies are inferred from the claim text.