Liquid crystal display apparatus and production method thereof
AssigneeNEC Corporation
InventorsTakahisa Hannuki, Shinichi Nishida, Satoshi Ihida, Shouichi Kuroha, Ryuji Takahashi, Satoshi Miura
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Abstract
The present invention provides a liquid crystal display apparatus of a lateral direction electric field drive type comprising an array substrate including a plurality of TFTs each having a gate electrode, a gate insulation film, a semiconductor layer, and a source electrode/drain electrode formed on a transparent substrate and an opposing substrate arrange so as to oppose to the array substrate, wherein the semiconductor layer has a width in the gate length direction identical to the gate length.
Claims14
A liquid crystal display apparatus of a lateral direction electric field drive type comprising an array substrate including a plurality of TFTs each having a gate electrode, a gate insulation film, a semiconductor layer, and a source electrode/drain electrode formed on a transparent substrate and an opposing substrate arrange so as to oppose to the array substrate,
- wherein the semiconductor layer has a width in the gate length direction identical to the gate length.
A liquid crystal display apparatus of a lateral direction electric field drive type comprising an array substrate including a plurality of TFTs each having a gate electrode, a gate insulation film, a semiconductor layer, and a source electrode/drain electrode formed on a transparent substrate and an opposing substrate arrange so as to oppose to the array substrate,
- wherein the semiconductor layer has a width in the gate length direction smaller than the gate length by 0 to 2 micrometers, considering a positioning margin during production.
A liquid crystal display apparatus production method comprising a photoresist step using a single mask for forming a semiconductor layer and a gate electrode.
A liquid crystal display apparatus of the lateral direction electric field drive type comprising an array substrate including a plurality of TFTs each having a gate electrode, a gate insulation film, a semiconductor layer, and a source electrode/drain electrode formed on a transparent substrate and an opposing substrate arrange so as to oppose to the array substrate,
- wherein the semiconductor layer has a width in the gate length direction identical to the gate electrode width in the channel length direction.
Dependencies are inferred from the claim text.